BD825 9 - NPN Power Transistor Technical Summary

Overview

The BD825 9 is a high-performance NPN power transistor designed for applications requiring high current and low voltage operation. Encased in a TO-202 (SOT128B) plastic package, this component is engineered for reliability and efficiency in power management circuits. Its robust construction and electrical characteristics make it suitable for a variety of industrial and consumer electronics applications.

Features

• High Current Capability: Supports a maximum current of 1 A, making it ideal for power amplification and switching applications.
• Low Voltage Operation: Operates efficiently at voltages up to 80 V, ensuring compatibility with low-voltage circuits.
• Robust Package: Housed in a TO-202 (SOT128B) plastic package, providing durability and thermal performance.
• Reliable Performance: Designed for stable operation under varying load conditions.
• Wide Application Range: Suitable for both industrial and consumer electronic devices.

Applications

The BD825 9 is versatile and can be used in a variety of electronic circuits, including but not limited to:

• Power Amplifiers: Utilized in audio and RF amplification stages due to its high current handling capability.
• Switching Circuits: Ideal for use in power switching applications, such as relay drivers and motor control.
• Voltage Regulators: Employed in linear voltage regulator circuits for stable power supply outputs.
• Industrial Controls: Used in control systems requiring reliable power transistors.
• Consumer Electronics: Found in devices like televisions, audio equipment, and power supplies.

Electrical Characteristics

The following table outlines the key electrical characteristics of the BD825 9 NPN power transistor under standard operating conditions (unless otherwise specified):

• Collector-Emitter Voltage (V_CEO): 80 V (max)
• Collector-Base Voltage (V_CBO): 100 V (max)
• Emitter-Base Voltage (V_EBO): 5 V (max)
• Collector Current (I_C): 1 A (max)
• Power Dissipation (P_tot): 1 W (max)
• DC Current Gain (h_FE): 40 - 250 (at I_C = 0.5 A, V_CE = 2 V)
• Transition Frequency (f_T): 50 MHz (typical)

Package Information

The BD825 9 is housed in a TO-202 (SOT128B) plastic package, which offers excellent thermal and mechanical properties. Below are the key package details:

• Package Type: TO-202 (SOT128B)
• Mounting Style: Through-hole
• Pin Configuration:
  • Pin 1: Emitter (E)
  • Pin 2: Base (B)
  • Pin 3: Collector (C)
• Dimensions:
  • Length: 7.6 mm (max)
  • Width: 6.2 mm (max)
  • Height: 2.5 mm (max)
• Weight: Approximately 0.35 g
• Thermal Resistance (R_thJA): 83 °C/W (typical)

Conclusion

The BD825 9 NPN power transistor is a reliable and efficient component designed for high-current, low-voltage applications. Its robust TO-202 package and excellent electrical characteristics make it a preferred choice for power amplification, switching circuits, and voltage regulation. Whether used in industrial control systems or consumer electronics, the BD825 9 delivers consistent performance and durability.