Technical Summary: 45 200 N-Channel Enhancement Mode MOSFET

Overview

The 45 200 is an N-channel enhancement mode MOSFET designed for high-efficiency switching applications. This component offers low on-state resistance, high-speed switching capabilities, and robust performance in a variety of electronic circuits. It is suitable for both industrial and consumer applications, providing reliable power management solutions.

With its advanced semiconductor technology, the 45 200 ensures minimal power loss and high thermal stability, making it ideal for demanding environments. The MOSFET is characterized by its high current handling capacity and low gate drive requirements, which enhance system efficiency and reduce overall power consumption.

Features

• N-Channel Enhancement Mode: Designed for high-performance switching applications.
• Low On-State Resistance (R_DS(on)): Minimizes conduction losses for improved efficiency.
• High-Speed Switching: Enables fast switching transitions, reducing switching losses.
• High Current Handling: Capable of managing significant current loads.
• Low Gate Drive Requirements: Reduces the complexity of drive circuitry.
• Thermal Stability: Robust design ensures reliable operation under varying thermal conditions.
• Compact Package: Available in industry-standard packages for easy integration.

Applications

The 45 200 MOSFET is versatile and can be used in a wide range of applications, including but not limited to:

• Power Supplies: DC-DC converters, SMPS (Switched-Mode Power Supplies).
• Motor Control: Brushed and brushless motor drivers, servo controls.
• Automotive Systems: Electronic control units (ECUs), LED lighting drivers.
• Industrial Equipment: Inverters, welding machines, and power tools.
• Consumer Electronics: Battery management systems, portable devices.
• Renewable Energy: Solar inverters, wind power systems.

Electrical Characteristics

The following table outlines the key electrical specifications of the 45 200 MOSFET under standard operating conditions (unless otherwise noted):

Absolute Maximum Ratings

• Drain-Source Voltage (V_DS): 200V
• Gate-Source Voltage (V_GS): ±20V
• Drain Current (I_D): 45A (continuous), 180A (pulsed)
• Power Dissipation (P_D): 150W (at 25°C)
• Operating Junction Temperature (T_J): -55°C to +175°C
• Storage Temperature (T_stg): -55°C to +175°C

Static Electrical Characteristics

• Threshold Voltage (V_GS(th)): 2V to 4V (V_DS = V_GS, I_D = 250µA)
• On-State Resistance (R_DS(on)): 0.025Ω (max) at V_GS = 10V, I_D = 20A
• Gate-Source Leakage Current (I_GSS): ±100nA (max) at V_GS = ±20V
• Drain-Source Leakage Current (I_DSS): 1µA (max) at V_DS = 200V, V_GS = 0V

Dynamic Electrical Characteristics

• Input Capacitance (C_iss): 1500pF (typical) at V_DS = 25V, V_GS = 0V
• Output Capacitance (C_oss): 500pF (typical) at V_DS = 25V, V_GS = 0V
• Reverse Transfer Capacitance (C_rss): 100pF (typical) at V_DS = 25V, V_GS = 0V
• Turn-On Delay Time (t_d(on)): 10ns (typical) at V_DD = 100V, I_D = 20A, R_G = 10Ω
• Turn-Off Delay Time (t_d(off)): 25ns (typical) at V_DD = 100V, I_D = 20A, R_G = 10Ω

Package Information

The 45 200 MOSFET is available in a TO-220 package, which provides excellent thermal performance and mechanical durability. The package dimensions and pin configuration are as follows:

TO-220 Package Dimensions

• Package Type: TO-220 (Through-Hole Mounting)
• Length: 10.4mm (max)
• Width: 4.6mm (max)
• Height: 15.9mm (max)
• Lead Pitch: 2.54mm
• Mounting Hole Diameter: 3.2mm (recommended)

Pin Configuration

• Pin 1 (Gate - G): Control terminal for switching the MOSFET.
• Pin 2 (Drain - D): High-voltage terminal connected to the load.
• Pin 3 (Source - S): Common ground terminal.

Thermal Characteristics

Proper thermal management is critical for ensuring the longevity and reliability of the 45 200 MOSFET. The following thermal specifications should be considered during design:

• Thermal Resistance, Junction-to-Case (R_θJC): 1.5°C/W
• Thermal Resistance, Junction-to-Ambient (R_θJA): 62°C/W (without heatsink)
• Maximum Junction Temperature (T_J(max)): 175°C

Conclusion

The 45 200 N-channel enhancement mode MOSFET is a high-performance component designed for efficient power switching applications. Its combination of low on-state resistance, high-speed switching, and robust thermal performance makes it suitable for a wide range of industrial, automotive, and consumer electronics applications.