2N6036 Complementary Silicon Power Darlington Transistor

Overview

The 2N6036 is a PNP silicon power Darlington transistor designed for high-power amplification and switching applications. It is part of a complementary pair with the NPN 2N6039, offering symmetrical performance characteristics. The device is housed in a Jedec SOT-32 plastic package, providing robust thermal and electrical performance. The 2N6036 is ideal for applications requiring high current gain, low saturation voltage, and reliable operation under demanding conditions.

Features

• High Current Gain: Darlington configuration provides exceptional current amplification.
• Complementary Pair: Matched with the NPN 2N6039 for push-pull and symmetrical circuit designs.
• High Voltage Tolerance: Supports collector-base voltage (VCBO) and collector-emitter voltage (VCEO) up to 80V.
• High Current Capacity: Continuous collector current (IC) rating of 4A, with a peak current (ICM) of 8A.
• Robust Power Dissipation: Total dissipation (Ptot) of 40W at temperatures ≤25°C.
• Wide Temperature Range: Storage temperature (Tstg) range from -65°C to 150°C.
• Compact Package: Jedec SOT-32 plastic package ensures durability and efficient heat dissipation.

Applications

The 2N6036 is suitable for a wide range of high-power applications, including:

• Power Amplifiers: Used in audio and RF amplification stages requiring high current gain.
• Switching Circuits: Ideal for relay drivers, motor controllers, and inductive load switching.
• Linear Regulators: Provides stable performance in voltage regulation circuits.
• Industrial Controls: Used in automation systems, solenoid drivers, and power management modules.
• Complementary Symmetry Circuits: Paired with the 2N6039 for push-pull configurations in audio and power supply designs.

Electrical Characteristics

Absolute Maximum Ratings

• Collector-Base Voltage (VCBO): 80V (IE = 0)
• Collector-Emitter Voltage (VCEO): 80V (IB = 0)
• Emitter-Base Voltage (VEBO): 5V (IC = 0)
• Collector Current (IC): 4A (continuous)
• Peak Collector Current (ICM): 8A (non-repetitive)
• Base Current (IB): 0.1A
• Total Power Dissipation (Ptot): 40W (at Tc ≤25°C)
• Storage Temperature (Tstg): -65°C to 150°C

Typical Performance Characteristics

The 2N6036 exhibits the following typical electrical performance under standard test conditions:

• DC Current Gain (hFE): 1000 (min) at IC = 4A, VCE = 4V
• Collector-Emitter Saturation Voltage (VCE(sat)): 1.5V (max) at IC = 4A, IB = 20mA
• Turn-On Time (ton): 1µs (typical)
• Turn-Off Time (toff): 2µs (typical)

Package Information

Jedec SOT-32 Package Details

The 2N6036 is housed in a Jedec SOT-32 plastic package, which provides mechanical strength and efficient thermal performance. Key package specifications include:

• Package Type: SOT-32 (TO-126 compatible)
• Mounting Style: Through-hole
• Pin Configuration:
  • Pin 1: Emitter
  • Pin 2: Collector
  • Pin 3: Base
• Dimensions: 10.16mm x 8.89mm x 4.83mm (L x W x H)
• Weight: Approximately 1.2 grams
• Thermal Resistance (RθJC): 3.125°C/W

Reliability and Compliance

The 2N6036 is manufactured to meet industry standards for reliability and performance. It undergoes rigorous testing to ensure compliance with electrical and thermal specifications. The device is RoHS compliant, making it suitable for use in environmentally sensitive applications.

Conclusion

The 2N6036 is a high-performance PNP Darlington transistor designed for demanding power amplification and switching applications. Its complementary pairing with the 2N6039, robust electrical characteristics, and durable SOT-32 package make it a versatile choice for engineers designing high-current circuits. With its high voltage tolerance, excellent current gain, and reliable thermal performance, the 2N6036 is well-suited for industrial, automotive, and consumer electronics applications.