Technical Summary: 628 55 N-Channel MOSFET

Overview

The 628 55 is a high-performance N-channel MOSFET designed for applications requiring very low on-state resistance (R_DS(ON)) and high-temperature operation. This component is optimized for power efficiency and reliability, featuring an integral zener diode for enhanced protection. With a maximum junction temperature (T_j) rating of 175°C, it is suitable for demanding environments.

Features

• Low On-State Resistance (R_DS(ON)): 28 mΩ (typical), minimizing conduction losses and improving efficiency.
• High Junction Temperature: Rated for operation up to 175°C, ensuring reliability in high-heat applications.
• Integrated Zener Diode: Provides built-in protection against voltage spikes and transients.
• N-Channel Enhancement Mode: Suitable for high-side and low-side switching applications.
• Optimized for Power Applications: Ideal for DC-DC converters, motor control, and power management systems.

Applications

The 628 55 MOSFET is versatile and can be used in a wide range of applications, including but not limited to:

• Switching Power Supplies: Efficiently manages power conversion in SMPS and DC-DC converters.
• Motor Control: Provides reliable switching for brushed and brushless motor drives.
• Automotive Systems: Suitable for high-temperature environments such as engine control units (ECUs) and LED lighting drivers.
• Industrial Equipment: Used in PLCs, inverters, and high-power switching circuits.
• Battery Management Systems (BMS): Ensures efficient power distribution and protection in lithium-ion and lead-acid battery systems.

Electrical Characteristics

The following table summarizes the key electrical parameters of the 628 55 MOSFET:

Absolute Maximum Ratings

• Drain-Source Voltage (V_DS): [Insert value] V
• Gate-Source Voltage (V_GS): ±[Insert value] V
• Continuous Drain Current (I_D): [Insert value] A
• Pulsed Drain Current (I_DM): [Insert value] A
• Junction Temperature (T_j): -55°C to +175°C
• Storage Temperature (T_stg): -55°C to +175°C

Static Electrical Characteristics

• Drain-Source On-State Resistance (R_DS(ON)): 28 mΩ (typical) at V_GS = [Insert value] V, I_D = [Insert value] A
• Gate Threshold Voltage (V_GS(th)): [Insert min/typ/max] V
• Zero Gate Voltage Drain Current (I_DSS): [Insert value] µA at V_DS = [Insert value] V
• Gate-Source Leakage Current (I_GSS): [Insert value] nA at V_GS = [Insert value] V

Dynamic Electrical Characteristics

• Input Capacitance (C_iss): [Insert value] pF at V_DS = [Insert value] V, V_GS = 0 V
• Output Capacitance (C_oss): [Insert value] pF at V_DS = [Insert value] V, V_GS = 0 V
• Reverse Transfer Capacitance (C_rss): [Insert value] pF at V_DS = [Insert value] V, V_GS = 0 V
• Turn-On Delay Time (t_d(on)): [Insert value] ns
• Turn-Off Delay Time (t_d(off)): [Insert value] ns

Package Information

The 628 55 MOSFET is available in a [Insert package type, e.g., TO-220, D2PAK, etc.] package, which provides excellent thermal performance and mechanical robustness. Key package details include:

• Package Type: [Insert package name]
• Mounting Style: Through-hole or surface mount (specify)
• Pin Configuration:
  • Pin 1: Gate (G)
  • Pin 2: Drain (D)
  • Pin 3: Source (S)
• Thermal Resistance (Junction-to-Case, R_θJC): [Insert value] °C/W
• Thermal Resistance (Junction-to-Ambient, R_θJA): [Insert value] °C/W
• Weight: [Insert value] grams

Reliability and Compliance

The 628 55 MOSFET adheres to industry standards for quality and reliability, including:

• RoHS Compliance: Yes/No
• Lead-Free: Yes/No
• Halogen-Free: Yes/No
• AEC-Q101 Qualified: Yes/No (if applicable)

Conclusion

The 628 55 N-channel MOSFET is a high-efficiency, robust component suitable for a wide range of power management and switching applications. Its low R_DS(ON), high-temperature tolerance, and integrated protection features make it an excellent choice for designers seeking reliability and performance in demanding environments.