Hitachi HM62V8512B 4-Mbit Static RAM

Overview

The Hitachi HM62V8512B is a high-performance 4-Mbit static RAM (SRAM) organized as 512-kword × 8-bit. Manufactured using advanced 0.35 µm Hi-CMOS process technology, this device delivers higher density, improved performance, and low power consumption, making it an ideal choice for battery backup systems and other power-sensitive applications. The HM62V8512B is available in two compact package options: a 525-mil SOP (Small Outline Package) and a 400-mil TSOP TYPE II, both designed for high-density mounting.

Features

• Single 3.0 V Supply: Operates within a voltage range of 2.7 V to 3.6 V, making it suitable for low-power applications.
• Fast Access Time: Maximum access times of 70 ns or 85 ns, ensuring quick data retrieval.
• Low Power Consumption:
  • Active mode: 15 mW/MHz (typical)
  • Standby mode: 3 µW (typical), ideal for battery-operated systems.
• Completely Static Memory: No clock or timing strobe required, simplifying design integration.
• Equal Access and Cycle Times: Ensures consistent performance for read and write operations.
• Three-State Output: Common data input and output with three-state capability for bus-oriented applications.
• LV-TTL Compatibility: All inputs are directly compatible with LV-TTL levels, facilitating easy interfacing with modern logic circuits.
• Battery Backup Operation: Designed for reliable performance in battery-backed systems.

Applications

The HM62V8512B is well-suited for a variety of applications, including:

• Battery Backup Systems: Its low standby power consumption makes it ideal for memory retention in battery-powered devices.
• Embedded Systems: Suitable for use in microcontrollers, industrial control systems, and other embedded applications requiring fast, reliable SRAM.
• Consumer Electronics: Used in portable devices such as digital cameras, handheld gaming consoles, and smart appliances.
• Networking Equipment: Provides high-speed memory for routers, switches, and other networking hardware.
• Automotive Electronics: Reliable operation in automotive infotainment systems, navigation units, and engine control modules.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (V_CC): -0.5 V to +4.6 V
• Input Voltage (V_IN): -0.5 V to V_CC + 0.5 V
• Output Voltage (V_OUT): -0.5 V to V_CC + 0.5 V
• Operating Temperature Range: -40°C to +85°C
• Storage Temperature Range: -65°C to +150°C

Recommended Operating Conditions

• Supply Voltage (V_CC): 2.7 V to 3.6 V
• Input High Voltage (V_IH): 2.0 V to V_CC + 0.3 V
• Input Low Voltage (V_IL): -0.3 V to 0.8 V
• Operating Temperature: -40°C to +85°C

DC Characteristics

• Input Leakage Current (I_LI): ±1 µA (max) at V_IN = 0 V to V_CC
• Output Leakage Current (I_LO): ±1 µA (max) at V_OUT = 0 V to V_CC
• Standby Current (I_SB): 3 µA (typical) at V_CC = 3.0 V, T_A = 25°C

AC Characteristics

• Read Cycle Time (t_RC): 70 ns (max) for -70 variant; 85 ns (max) for -85 variant
• Write Cycle Time (t_WC): 70 ns (max) for -70 variant; 85 ns (max) for -85 variant
• Address Setup Time (t_AS): 0 ns (min)
• Address Hold Time (t_AH): 10 ns (min)
• Output Enable to Output Valid (t_OE): 20 ns (max)

Package Information

Available Packages

• 525-mil SOP (Small Outline Package):
  • Footprint pitch width: 525 mil
  • Package dimensions: 12.8 mm × 7.5 mm × 2.35 mm
  • Pin count: 32
• 400-mil TSOP TYPE II (Thin Small Outline Package):
  • Footprint pitch width: 400 mil
  • Package dimensions: 18.4 mm × 8.1 mm × 1.2 mm
  • Pin count: 32

Ordering Information

The HM62V8512B is available in different variants based on access time and package type. Below is the ordering information:

• HM62V8512B-70: 70 ns access time, available in SOP or TSOP packages.
• HM62V8512B-85: 85 ns access time, available in SOP or TSOP packages.

Conclusion

The Hitachi HM62V8512B is a versatile and high-performance 4-Mbit SRAM designed for applications requiring low power consumption, high density, and reliable operation. With its wide operating voltage range, fast access times, and compact packaging options, it is an excellent choice for battery backup systems, embedded designs, and other power-sensitive applications. Its compatibility with LV-TTL levels and three-state outputs further enhance its usability in a wide range of electronic systems.