Technical Summary: M29W200B 2 Mbit Flash Memory

Overview

The M29W200B is a high-performance 2 Mbit (256Kb x8 or 128Kb x16) non-volatile flash memory device designed for applications requiring reliable data storage with fast access times. Manufactured using advanced CMOS technology, this component offers low power consumption, high endurance, and a flexible interface suitable for embedded systems. With a symmetrical block architecture and a wide voltage range, the M29W200B is ideal for both industrial and consumer applications.

Key Features

• Memory Organization: Configurable as 256Kb x8 or 128Kb x16
• Supply Voltage: 2.7V to 3.6V (single power supply)
• Access Time: 70ns maximum
• Low Power Consumption: 20mA active current (typical), 1μA standby current
• Block Architecture: Uniform 4Kb sectors for flexible data storage
• Endurance: 100,000 program/erase cycles per block
• Data Retention: 20 years minimum
• Hardware Protection: WP# pin for write protection
• Software Commands: JEDEC-standard command set
• Operating Temperature: -40°C to +85°C (industrial grade)

Applications

The M29W200B is suitable for a wide range of applications including:

• Embedded firmware storage
• Industrial control systems
• Automotive electronics
• Telecommunications equipment
• Consumer electronics
• Medical devices
• Set-top boxes and networking devices

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (V_CC): -0.6V to +4.0V
• Input Voltage (V_IN): -0.6V to V_CC + 0.6V
• Storage Temperature: -65°C to +150°C
• Operating Temperature: -40°C to +85°C

DC Characteristics (T_A = 25°C, V_CC = 3.0V)

• Supply Current (Read): 20mA max (5MHz)
• Supply Current (Program/Erase): 30mA max
• Standby Current: 1μA max
• Input Leakage Current: ±1μA max
• Output Leakage Current: ±1μA max

AC Characteristics

• Address Access Time: 70ns max
• Chip Enable Access Time: 70ns max
• Output Enable Access Time: 30ns max
• Write Pulse Width: 50ns min
• Sector Erase Time: 1s typical, 2s max
• Chip Erase Time: 10s typical, 20s max

Functional Description

Memory Architecture

The M29W200B features a uniform sector architecture with 64 sectors of 4Kb each. This symmetrical structure allows for flexible data management and efficient erase operations. The device supports both byte (x8) and word (x16) configurations selected via the BYTE# pin.

Read Operations

The memory array can be read like a standard ROM when in read mode. Access times are specified from address valid (t_ACC) or chip enable (t_CE), with output enable (t_OE) controlling data output timing.

Program and Erase Operations

The device uses a command-driven interface for programming and erase operations. Key features include:

• Automatic program/erase algorithms
• Status polling and toggle bits for operation completion detection
• Data# polling for program verification
• Sector protection/unprotection capability

Package Information

Available Packages

• TSOP48 (12x20mm): Thin Small Outline Package, 48 pins
• PLCC32 (11.43x13.97mm): Plastic Leaded Chip Carrier, 32 pins
• SO44 (16.1x10.5mm): Small Outline Package, 44 pins

Pin Configuration (TSOP48)

The device features the following key pin functions:

• A0-A17: Address inputs
• DQ0-DQ15: Data inputs/outputs
• CE#: Chip enable
• OE#: Output enable
• WE#: Write enable
• BYTE#: Byte/word configuration
• WP#: Write protect
• RY/BY#: Ready/busy output

Quality and Reliability

The M29W200B meets stringent quality requirements:

• 100% tested for program/erase endurance
• Data retention verified through accelerated testing
• ESD protection > 2000V (Human Body Model)
• Latch-up immunity > 100mA

Ordering Information