K4E641612C 4Mx16 EDO Mode DRAM

Overview

The K4E641612C is a 4Mx16 Extended Data Out (EDO) Mode Dynamic Random-Access Memory (DRAM) component manufactured by Samsung. It is part of a DRAM family that includes variants with different refresh cycle capabilities, such as the K4E661612C-TC/L (8K refresh) and the K4E641612C-TC/L (4K refresh). This device is designed for high-bandwidth, low-power applications and is fabricated using Samsung's advanced CMOS process for enhanced reliability.

The K4E641612C supports multiple refresh modes, including CAS-before-RAS refresh, RAS-only refresh, and Hidden refresh. The L-version of this component also features Self-refresh capability, making it suitable for power-sensitive applications. The device operates at a supply voltage of +3.3V ±0.3V and is compatible with LVTTL input and output levels.

Features

• Extended Data Out (EDO) Mode Operation: Enhances data access speed by allowing data to remain valid on the output pins even after the CAS signal is deasserted.
• 2 CAS Byte/Word Read/Write Operation: Supports flexible data access in byte or word configurations.
• Multiple Refresh Modes: Includes CAS-before-RAS refresh, RAS-only refresh, and Hidden refresh capabilities.
• Self-Refresh Capability (L-version only): Enables the device to manage its own refresh cycles, reducing power consumption in standby modes.
• Fast Parallel Test Mode: Facilitates efficient testing during manufacturing and validation.
• LVTTL (3.3V) Compatibility: Inputs and outputs are compatible with LVTTL logic levels.
• Early Write or Output Enable Controlled Write: Provides flexibility in write operation timing.
• JEDEC Standard Pinout: Ensures compatibility with industry-standard designs.
• Plastic TSOP(II) Package: Available in a compact and industry-standard package.

Applications

The K4E641612C is suitable for a wide range of applications that require high-speed, low-power memory solutions. Common applications include:

• Computing Systems: Used in desktops, laptops, and servers for temporary data storage.
• Embedded Systems: Ideal for industrial control systems, medical devices, and automotive electronics.
• Networking Equipment: Employed in routers, switches, and other networking hardware for buffering and data storage.
• Consumer Electronics: Found in gaming consoles, set-top boxes, and multimedia devices.
• Telecommunications: Used in base stations and communication infrastructure for high-speed data processing.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (Vcc): -0.5V to +4.6V
• Input Voltage (Vin): -0.5V to Vcc + 0.5V
• Output Voltage (Vout): -0.5V to Vcc + 0.5V
• Operating Temperature Range: 0°C to +70°C (Commercial)
• Storage Temperature Range: -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (Vcc): +3.3V ±0.3V
• Input High Voltage (Vih): 2.0V to Vcc + 0.3V
• Input Low Voltage (Vil): -0.3V to 0.8V
• Operating Temperature: 0°C to +70°C

DC Characteristics

• Input Leakage Current (Ili): ±1.0µA (max)
• Output Leakage Current (Ilo): ±1.0µA (max)
• Operating Current (Icc): 120mA (typical)
• Standby Current (Isb): 20mA (typical)

AC Characteristics

• RAS to CAS Delay (tRCD): 20ns (max)
• CAS Pulse Width (tCAS): 15ns (min)
• RAS Pulse Width (tRAS): 60ns (min)
• Access Time from CAS (tCAC): 15ns (max)
• Refresh Cycle Time (tREF): 64ms (4K refresh)

Package Information

The K4E641612C is available in a Plastic Thin Small Outline Package (TSOP) Type II, which is a surface-mount package designed for high-density memory applications. The package dimensions and pin configuration adhere to industry standards, ensuring compatibility with automated assembly processes.

TSOP(II) Package Dimensions

• Package Type: 54-pin TSOP(II)
• Width: 10.16mm (max)
• Length: 22.22mm (max)
• Thickness: 1.2mm (max)
• Pin Pitch: 0.8mm

Pin Configuration

The K4E641612C follows the JEDEC standard pinout for 4Mx16 DRAM devices. Key pins include:

• DQ0-DQ15: Data input/output pins for 16-bit data bus.
• RAS: Row Address Strobe.
• UCAS, LCAS: Upper and Lower Column Address Strobes.
• W: Write Enable.
• OE: Output Enable.
• Vcc, Vss: Power supply and ground pins.

Conclusion

The K4E641612C is a high-performance, low-power 4Mx16 EDO Mode DRAM designed for applications requiring fast data access and efficient power management. With its multiple refresh modes, LVTTL compatibility, and industry-standard packaging, it is a versatile solution for a wide range of computing, embedded, and networking applications. Samsung's advanced CMOS process ensures high reliability and performance, making this component a robust choice for modern electronic systems.