HB52F89EM 8-Byte DIMM Synchronous DRAM Module

Overview

The HB52F89EM is a high-performance 8-byte DIMM (Dual In-line Memory Module) designed as an optimized main memory solution for 8-byte processor applications. This synchronous DRAM module features a 168-pin socket-type package with dual lead-out configuration, making it suitable for high-density mounting without requiring surface mount technology. The module is organized as 8M × 72 × 1-bank, incorporating nine 64-Mbit SDRAMs (HM5264805FTT) in TSOP packages and one 2-kbit serial EEPROM for Presence Detect (PD) functionality.

Key Features

• JEDEC Standard Compliance: Fully compatible with JEDEC standard outline for 8-byte DIMM modules
• Package: 168-pin socket type (dual lead out)
• Dimensions: 133.37 mm (Length) × 34.925 mm (Height) × 4.00 mm (Thickness)
• Lead Pitch: 1.27 mm
• Power Supply: 3.3 V LVTTL interface
• Clock Frequency: Maximum 133 MHz operation
• Data Bus Width: ×72 with ECC support
• Bank Architecture: 4 banks capable of simultaneous and independent operation
• Burst Operations: Supports burst read/write and burst read/single write operations
• Programmable Features:
  • Burst length: 1/2/4/8/full page
  • Burst sequence: Sequential or Interleave
  • CAS latency: 3 (133 MHz) or 2 (100 MHz)
• Refresh Options: Auto refresh and self refresh modes
• Refresh Cycles: 4096 refresh cycles every 64 ms
• Additional Features: Byte control via DQMB, full page burst capability, and burst stop functionality

Applications

The HB52F89EM is designed for use in high-performance computing systems requiring reliable memory solutions with error correction capabilities. Typical applications include:

• Server main memory systems
• High-performance workstations
• Data center equipment
• Enterprise storage systems
• Mission-critical computing applications
• Systems requiring ECC memory protection

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage: -0.5 V to +4.6 V
• Input Voltage: -0.5 V to VDD + 0.5 V
• Operating Temperature: 0°C to +70°C
• Storage Temperature: -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (VDD): 3.3 V ± 0.3 V
• Input High Voltage (VIH): 2.0 V to VDD + 0.3 V
• Input Low Voltage (VIL): -0.3 V to 0.8 V
• Operating Temperature: 0°C to +70°C

DC Characteristics

• Input Leakage Current: ±1 μA (max)
• Output Leakage Current: ±1 μA (max)
• Operating Current: TBD mA (typical)
• Standby Current: TBD mA (typical)

AC Characteristics

• Clock Cycle Time: 7.5 ns (133 MHz) to 10 ns (100 MHz)
• CAS Latency: 3 cycles (133 MHz), 2 cycles (100 MHz)
• Access Time: 5.4 ns (max)
• Data Hold Time: 1.0 ns (min)
• Refresh Period: 64 ms (4096 cycles)

Package Information

Mechanical Specifications

• Package Type: 168-pin socket type DIMM
• Module Height: 34.925 mm
• Module Length: 133.37 mm
• Module Thickness: 4.00 mm
• Lead Pitch: 1.27 mm
• Weight: Approximately 25 g

Pin Configuration

The 168-pin DIMM socket connector features a dual lead-out configuration with pins arranged in two rows. The pinout includes:

• 64/72 data lines (DQ0-DQ71)
• 8/9 data mask lines (DM0-DM8)
• Address inputs (A0-A11)
• Bank address inputs (BA0-BA1)
• Control signals (RAS, CAS, WE, CS)
• Clock inputs (CLK, CLK)
• Power and ground connections
• Presence Detect signals

Mounting Information

• DIMM modules are designed for vertical insertion into standard DIMM sockets
• Keying notch prevents incorrect insertion
• Recommended insertion force: 30N maximum
• Extraction force: 10N minimum
• Decoupling capacitors are mounted beside each TSOP package on the module board

Ordering Information

The HB52F89EM is available in different speed grades and configurations:

• HB52F89EM-75F: 133 MHz operation (CL=3)
• HB52F89EM-10F: 100 MHz operation (CL=2)

Note: 100 MHz operation is available at CAS latency = 2.

Reliability and Quality

• All devices undergo comprehensive testing and burn-in procedures
• Manufactured in ISO 9001 certified facilities
• RoHS compliant
• Designed for extended product lifecycles