2N5416 High Voltage Silicon Transistor

Overview

The 2N5416 is a high-voltage silicon PNP transistor designed for applications requiring robust performance under elevated voltage conditions. Part of the 2N541x series, this component is characterized by its ability to handle significant collector-emitter voltages while maintaining stable operation. The transistor is suitable for amplification and switching applications in industrial, commercial, and military environments.

Manufactured with a silicon epitaxial planar process, the 2N5416 offers excellent reliability and thermal stability. Its high-voltage capability makes it particularly useful in power supply circuits, voltage regulators, and other high-stress electronic systems.

Features

• High Voltage Capability: Collector-emitter voltage (V_CEO) rating of up to 120V.
• Moderate Current Handling: Collector current (I_C) of 1A, suitable for many power applications.
• Low Leakage Current: Ensures minimal power loss in off-state conditions.
• Good Gain Characteristics: DC current gain (h_FE) ranging from 20 to 100, depending on operating conditions.
• Robust Construction: Designed for reliable operation in demanding environments.
• Wide Temperature Range: Operates effectively from -65°C to +200°C.

Applications

The 2N5416 is versatile and finds use in a variety of electronic circuits, including:

• Power Supplies: Used in linear regulators and high-voltage power supply circuits.
• Amplification: Suitable for audio and RF amplification stages requiring high voltage tolerance.
• Switching Circuits: Effective in relay drivers and other switching applications.
• Industrial Controls: Employed in motor control and automation systems.
• Military and Aerospace: Meets stringent requirements for high-reliability applications.

Electrical Characteristics

The following tables outline the key electrical specifications for the 2N5416 transistor under typical operating conditions (25°C unless otherwise specified).

Absolute Maximum Ratings

• Collector-Emitter Voltage (V_CEO): 120V
• Collector-Base Voltage (V_CBO): 150V
• Emitter-Base Voltage (V_EBO): 5V
• Collector Current (I_C): 1A
• Total Power Dissipation (P_tot): 1W at 25°C (derate above 25°C)
• Operating and Storage Temperature Range: -65°C to +200°C

Thermal Characteristics

• Thermal Resistance, Junction-to-Ambient (R_θJA): 200°C/W
• Thermal Resistance, Junction-to-Case (R_θJC): 83.3°C/W

DC Current Gain (h_FE)

The DC current gain varies with collector current and temperature. Typical values are:

• At I_C = 10mA, V_CE = 5V: 40 to 120
• At I_C = 100mA, V_CE = 5V: 20 to 60

Package Information

The 2N5416 is available in a TO-39 metal can package, which provides excellent thermal performance and mechanical durability. The package dimensions and pin configuration are as follows:

TO-39 Package Dimensions

• Case Diameter: 8.13 mm (0.320 in)
• Case Height: 5.59 mm (0.220 in)
• Lead Diameter: 0.46 mm (0.018 in)
• Lead Length: 12.7 mm (0.500 in)
• Weight: Approximately 1.2 grams

Pin Configuration

• Pin 1 (Emitter): Connected to the emitter region of the transistor.
• Pin 2 (Base): Controls the transistor's operation.
• Pin 3 (Collector): Main current-carrying terminal.

Reliability and Quality

The 2N5416 is manufactured under strict quality control processes to ensure high reliability and performance consistency. It undergoes rigorous testing for parameters such as:

• High-voltage breakdown characteristics
• Thermal stability under load
• Long-term operational reliability

This transistor is suitable for applications where failure is not an option, including medical, military, and aerospace systems.

Conclusion

The 2N5416 high-voltage PNP transistor is a robust and reliable component designed for demanding applications. Its combination of high voltage tolerance, moderate current handling, and excellent thermal characteristics make it a versatile choice for engineers working on power electronics, amplification, and switching circuits. The TO-39 package ensures durability and efficient heat dissipation, further enhancing its suitability for harsh environments.