K4E641611C 4Mx16 EDO Mode DRAM

Overview

The K4E641611C is a high-performance 4Mx16 Extended Data Out (EDO) Mode Dynamic Random-Access Memory (DRAM) component manufactured using Samsung's advanced CMOS process. This device is designed to deliver high bandwidth, low power consumption, and high reliability, making it suitable for a wide range of computing and embedded applications. The K4E641611C operates with a 5.0V ±10% power supply and supports various refresh modes, including CAS-before-RAS, RAS-only, and Hidden refresh.

This DRAM is part of a family that includes variants with different refresh cycle capabilities, such as the K4E661611C-TC (8K refresh) and the K4E641611C-TC (4K refresh). The device is packaged in a Plastic TSOP(II) form factor, adhering to JEDEC standard pinouts for compatibility with industry designs.

Features

• Extended Data Out (EDO) Mode Operation: Enhances data access speed by allowing data to remain valid after CAS deactivation.
• 2 CAS Byte/Word Read/Write Operation: Supports flexible data access in byte or word configurations.
• Multiple Refresh Modes:
  • CAS-before-RAS refresh capability
  • RAS-only refresh capability
  • Hidden refresh capability (allows refresh cycles without disrupting data access)
• Fast Parallel Test Mode: Facilitates efficient manufacturing and quality assurance testing.
• TTL (5.0V) Compatible Inputs and Outputs: Ensures seamless integration with TTL logic systems.
• Early Write or Output Enable Controlled Write: Provides flexibility in write timing control.
• JEDEC Standard Pinout: Ensures compatibility with industry-standard designs.
• Plastic TSOP(II) Package: Compact and surface-mountable for space-constrained applications.
• Wide Power Supply Tolerance: Operates at +5.0V ±10% for robust performance in varying conditions.

Applications

The K4E641611C is designed for use in a variety of high-performance and embedded systems, including:

• Desktop and Laptop Computers: Used as main memory or cache in legacy systems.
• Workstations and Servers: Provides high-bandwidth memory for data-intensive applications.
• Embedded Systems: Suitable for industrial control systems, networking equipment, and telecommunications devices.
• Graphics and Multimedia Systems: Supports high-speed data access for video and image processing.
• Test and Measurement Equipment: Used in devices requiring reliable and fast memory access.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (Vcc): -0.5V to +7.0V
• Input Voltage (Vin): -0.5V to Vcc + 0.5V
• Output Voltage (Vout): -0.5V to Vcc + 0.5V
• Operating Temperature Range: 0°C to +70°C (commercial grade)
• Storage Temperature Range: -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (Vcc): 4.5V to 5.5V
• Input High Voltage (Vih): 2.0V min
• Input Low Voltage (Vil): 0.8V max
• Operating Temperature: 0°C to +70°C

Timing Characteristics

• RAS Precharge Time (tRP): 20 ns min
• CAS Precharge Time (tCP): 20 ns min
• RAS to CAS Delay (tRCD): 20 ns min
• CAS Pulse Width (tCAS): 20 ns min
• Access Time from CAS (tCAC): 15 ns max
• Refresh Cycle Time (tREF): 64 ms (4K refresh mode)

Package Information

The K4E641611C is available in a Plastic TSOP(II) package, which is a thin, surface-mountable form factor ideal for high-density PCB designs. Key package details include:

• Package Type: 44-pin TSOP(II)
• Package Dimensions: 10.16mm x 18.41mm x 1.2mm (typical)
• Pin Pitch: 0.8mm
• Lead Material: Matte Tin (Sn) plating for solderability
• Moisture Sensitivity Level (MSL): MSL 3 (per IPC/JEDEC J-STD-020)

Pin Configuration

The pinout of the K4E641611C adheres to JEDEC standards, with key pins including:

• DQ0-DQ15: Data input/output lines (16-bit wide)
• RAS: Row Address Strobe
• UCAS, LCAS: Upper and Lower Column Address Strobes
• W: Write Enable
• OE: Output Enable
• Vcc, Vss: Power supply and ground pins

Functional Description

The K4E641611C operates as a 4Mx16 DRAM with EDO mode functionality. Key functional blocks include:

• Row and Column Decoders: Selects the appropriate memory cells based on address inputs.
• Sense Amplifiers: Detects and amplifies the small voltage differences in memory cells during read operations.
• Refresh Control: Manages automatic refresh cycles to maintain data integrity.
• Data Buffers: Temporarily holds data during read/write operations.

Conclusion

The K4E641611C is a versatile and high-performance DRAM component suitable for a wide range of applications requiring reliable and fast memory access. Its support for multiple refresh modes, EDO operation, and JEDEC-standard packaging make it an excellent choice for legacy and embedded systems. With robust electrical characteristics and a compact TSOP(II) package, this device offers a balance of performance, power efficiency, and integration ease.