HM5212165F Datasheet | Next Electromics

HM5212165F 128-Mbit SDRAM Technical Summary

Overview

The Hitachi HM5212165F is a high-performance 128-Mbit Synchronous DRAM (SDRAM) organized as 2,097,152 words × 16 bits × 4 banks. This component is designed for applications requiring high-speed data access and efficient memory management. The device operates with a 3.3V power supply and features a fully synchronous operation with all inputs and outputs referenced to the rising edge of the clock. The HM5212165F is available in a standard 54-pin plastic TSOP II package, making it suitable for space-constrained applications.

The HM5212165F is part of a family that includes the HM5212805F variant, which is organized as 4,194,304 words × 8 bits × 4 banks. Both devices share similar core architectures but differ in their data bus width configurations to accommodate different system requirements.

Features

Memory Organization: 128-Mbit capacity organized as 2,097,152 words × 16 bits × 4 banks
Power Supply: 3.3V ± 0.3V
Clock Frequency: Supports up to 133 MHz (max) operation with 100 MHz variant available
Interface: LVTTL compatible
Bank Architecture: Four independent banks supporting simultaneous operation
Burst Operation: Programmable burst lengths (1, 2, 4, 8, or full page) with burst stop capability
Burst Sequences: Supports both sequential and interleave modes
CAS Latency: Programmable to 2 or 3 clock cycles
Data Masking: Byte control via DQMU/DQML signals
Refresh Modes: Supports both auto refresh and self refresh modes
Refresh Cycle: 4096 refresh cycles every 64ms
Package: 54-pin plastic TSOP II (Type II) package

Applications

The HM5212165F is designed for use in a wide range of applications requiring high-speed memory access and efficient data management. Typical applications include:

Computer systems and workstations
Networking equipment (routers, switches)
Telecommunications infrastructure
High-performance embedded systems
Graphics and video processing systems
Industrial control systems
Consumer electronics requiring high-speed memory

Electrical Characteristics

Absolute Maximum Ratings

Supply Voltage (VDD/VDDQ): -0.5V to +4.6V
Input Voltage (VI): -0.5V to VDDQ + 0.5V
Output Voltage (VO): -0.5V to VDDQ + 0.5V
Operating Temperature Range: 0°C to +70°C
Storage Temperature Range: -55°C to +125°C

Recommended Operating Conditions

Supply Voltage (VDD/VDDQ): 3.3V ± 0.3V
Input High Voltage (VIH): 2.0V min (VDDQ = 3.0V)
Input Low Voltage (VIL): 0.8V max (VDDQ = 3.0V)
Operating Temperature: 0°C to +70°C

DC Characteristics

Input Leakage Current (II): ±1μA max
Output Leakage Current (IOZ): ±1μA max
Active Current (IDD): 120mA max (133MHz operation)
Standby Current (IDD2): 20mA max (LVTTL inputs)
Self Refresh Current (IDD6): 400μA max

AC Characteristics

Clock Cycle Time (tCK): 7.5ns min (133MHz), 10ns min (100MHz)
CAS Latency: 2 or 3 clock cycles (programmable)
Access Time (tAC): 5.4ns max (133MHz, CL=3)
Address Setup Time (tAS): 1.5ns min
Address Hold Time (tAH): 0.8ns min
Data-in Setup Time (tDS): 1.5ns min
Data-in Hold Time (tDH): 0.8ns min

Package Information

The HM5212165F is available in a 54-pin plastic TSOP II package with the following mechanical characteristics:

Package Type: TSOP II (Type II)
Pin Count: 54
Package Dimensions: 22.2mm × 10.2mm × 1.2mm (typical)
Pin Pitch: 0.8mm
Lead Material: Alloy 42 or equivalent
Lead Finish: Matte tin or solder plating

Pin Configuration

The 54-pin TSOP II package includes the following key signal groups:

Clock and control signals (CLK, CKE, CS, RAS, CAS, WE)
Address inputs (A0-A11, BA0-BA1)
Data inputs/outputs (DQ0-DQ15)
Data mask controls (DQMU, DQML)
Power and ground (VDD, VDDQ, VSS, VSSQ)

Functional Description

The HM5212165F operates as a synchronous device with all its inputs sampled at the rising edge of the system clock. The four-bank architecture allows for efficient memory management and concurrent operations across different banks. The device supports various operational modes including: