K4F661612D - 4Mx16 Fast Page Mode DRAM

Overview

The K4F661612D is a 4Mx16 Fast Page Mode DRAM component manufactured by Samsung Electronics using advanced CMOS process technology. This high-performance memory solution offers a combination of high bandwidth, low power consumption, and excellent reliability, making it suitable for various computing and embedded applications. The device features multiple refresh modes including CAS-before-RAS, RAS-only, Hidden refresh, and Self-refresh (L-version only) capabilities.

Key Features

• Fast Page Mode operation for improved memory access efficiency
• 2CAS Byte/Word Read/Write operation capability
• Multiple refresh modes:
  • CAS-before-RAS refresh
  • RAS-only refresh
  • Hidden refresh
  • Self-refresh capability (L-version only)
• Fast parallel test mode capability for efficient production testing
• LVTTL (3.3V) compatible inputs and outputs
• Flexible write options:
  • Early Write mode
  • Output enable controlled write
• JEDEC standard pinout for compatibility
• Available in Plastic TSOP(II) packages
• Single +3.3V ±0.3V power supply

Applications

The K4F661612D is designed for use in a wide range of electronic systems requiring high-performance memory solutions:

• Computer systems and workstations
• Networking equipment (routers, switches)
• Telecommunications infrastructure
• Embedded systems and industrial controllers
• Graphics and display systems
• Data storage systems
• Test and measurement equipment

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (Vcc): -0.5V to +4.6V
• Input Voltage (Vin): -0.5V to Vcc + 0.5V
• Output Voltage (Vout): -0.5V to Vcc + 0.5V
• Operating Temperature Range: 0°C to +70°C (Commercial)
• Storage Temperature Range: -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (Vcc): 3.3V ±0.3V
• Input High Voltage (VIH): 2.0V min
• Input Low Voltage (VIL): 0.8V max
• Operating Temperature: 0°C to +70°C

DC Characteristics

• Input Leakage Current (Ili): ±1μA max
• Output Leakage Current (Ilo): ±1μA max
• Operating Current (Icc1): TBD mA (Active)
• Standby Current (Icc2): TBD μA (CMOS level)
• Self Refresh Current (Icc3): TBD μA (L-version only)

AC Characteristics

• Random Read Cycle Time: TBD ns
• Random Write Cycle Time: TBD ns
• Page Mode Read Cycle Time: TBD ns
• Page Mode Write Cycle Time: TBD ns
• RAS Precharge Time: TBD ns
• CAS Precharge Time: TBD ns
• Address Setup Time: TBD ns
• Address Hold Time: TBD ns
• Data-in Setup Time: TBD ns
• Data-in Hold Time: TBD ns

Package Information

TSOP-II Package Dimensions

• Package Type: 54-pin Plastic TSOP-II
• Package Width: 10.16mm (nominal)
• Package Length: 22.22mm (nominal)
• Package Height: 1.20mm (max)
• Lead Pitch: 0.80mm
• Lead Width: 0.22mm (nominal)
• Lead Length: 0.60mm (nominal)

Pin Configuration

The K4F661612D follows JEDEC standard pinout configuration for 4Mx16 DRAM devices. The 54-pin TSOP-II package includes:

• Address inputs (A0-A10)
• Data inputs/outputs (DQ0-DQ15)
• Control signals:
  • RAS (Row Address Strobe)
  • CAS (Column Address Strobe)
  • UCAS (Upper Column Address Strobe)
  • LCAS (Lower Column Address Strobe)
  • W (Write Enable)
  • OE (Output Enable)
• Power supply pins (Vcc)
• Ground pins (Vss)
• No Connect (NC) pins

Functional Description

Memory Organization

The K4F661612D is organized as 4,194,304 words × 16 bits. The memory array is divided into four banks of 1,048,576 words × 16 bits each. This organization allows for efficient memory management and access.

Refresh Modes

The device supports several refresh modes to maintain data integrity:

• CAS-before-RAS Refresh: Initiated by asserting CAS before RAS, with refresh addresses generated internally
• RAS-only Refresh: Initiated by asserting RAS while holding CAS high, with refresh addresses supplied externally
• Hidden Refresh: Combines refresh with an active cycle for improved performance
• Self Refresh (L-version only): Automatic refresh controlled by internal timer during low-power states

Operation Modes

The K4F661612D supports multiple operation modes for flexible system integration:

• Fast Page Mode: Allows consecutive accesses within the same row without repeating the row address
• Byte/Word Access: Supports both byte (8-bit) and word (16-bit) operations using UCAS and LCAS control
• Write Options: Supports both Early Write and Read-Modify-Write operations

Ordering Information

The K4F661612D is available in different versions and packages. The complete ordering information includes:

• Speed grade options
• Package type (TSOP-II)
• Temperature range (Commercial)
• Special features (L-version for self-refresh)

Quality and Reliability

Samsung Electronics maintains strict quality control measures for the K4F661612D DRAM family:

• 100% production tested
• Comprehensive burn-in and reliability testing
• JEDEC