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BS107

#BS107 #N-channel #enhancement mode #MOSFET #low-power switching #DMOS FET #CMOS #TTL logic #fast switching
Here is a detailed HTML-formatted technical summary for the BS107 N-channel enhancement mode MOSFET:

BS107 N-Channel Enhancement Mode MOSFET

Overview

The BS107 is a silicon N-channel enhancement mode vertical DMOS FET designed for low-power switching applications. This MOSFET offers excellent performance in low-voltage, low-current circuits with its high input impedance and fast switching speeds. The BS107 is particularly well-suited for interfacing directly with CMOS and TTL logic circuits due to its low threshold voltage requirements.

With its compact design and reliable performance characteristics, the BS107 serves as an ideal solution for a wide range of general-purpose switching applications in consumer electronics, industrial controls, and telecommunications equipment.

Key Features

Applications

The BS107 finds use in a variety of electronic applications including:

Electrical Characteristics

(All values typical at 25°C unless otherwise specified)

Absolute Maximum Ratings

Static Characteristics

Dynamic Characteristics

Package Information

The BS107 is available in several industry-standard packages:

TO-92 Package

SOT-23 Package

Thermal Characteristics

Handling and Mounting Considerations

When working with the BS107 MOSFET, observe the following precautions:

Reliability and Qualification

The BS107 MOSFET meets or exceeds the following reliability standards:

Ordering Information

The BS107 is available in various packaging options:

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