BFR90 - NPN RF Transistor

Overview

The BFR90 is a high-performance NPN silicon RF transistor designed for applications requiring high power gain, low noise figure, and excellent high-frequency characteristics. This component is housed in a TO-50 metal package, ensuring reliable thermal performance and mechanical stability. The BFR90 is optimized for use in RF amplification stages, oscillators, and other high-frequency circuits where signal integrity and gain are critical.

With its high transition frequency and robust construction, the BFR90 is suitable for both commercial and industrial applications across various frequency bands. Its electrical characteristics make it particularly valuable in communication systems, test equipment, and other RF-intensive environments.

Features

• High Power Gain: Delivers significant signal amplification for improved system performance
• Low Noise Figure: Minimizes signal degradation in sensitive receiver applications
• High Transition Frequency (fT): Enables operation at high frequencies with good gain characteristics
• TO-50 Metal Package: Provides excellent thermal dissipation and mechanical durability
• Robust Construction: Suitable for demanding environmental conditions
• Lead (Pb)-free: Compliant with RoHS environmental standards

Applications

The BFR90 is versatile and finds use in numerous high-frequency applications:

• RF Amplifiers: Both low-noise and power amplification stages
• Communication Systems: Base stations, repeaters, and transceivers
• Test and Measurement Equipment: Signal generators, spectrum analyzers
• Oscillator Circuits: Local oscillators, VCOs, and frequency synthesizers
• Microwave Systems: Point-to-point radio links, satellite communications
• Industrial Equipment: RF heating, medical diathermy

Electrical Characteristics

(TA = 25°C unless otherwise specified)

Absolute Maximum Ratings

• Collector-Base Voltage (VCBO): 20V
• Collector-Emitter Voltage (VCEO): 15V
• Emitter-Base Voltage (VEBO): 2V
• Collector Current (IC): 30mA
• Total Power Dissipation (PTOT): 300mW
• Operating Junction Temperature (Tj): +150°C
• Storage Temperature Range (Tstg): -65°C to +150°C

Typical Performance Characteristics

• Current Gain Bandwidth Product (fT): 5GHz (typical)
• Noise Figure (NF): 1.5dB @ 1GHz (typical)
• Power Gain (Gp): 15dB @ 1GHz (typical)
• DC Current Gain (hFE): 40-120 @ IC = 10mA, VCE = 5V
• Collector-Emitter Saturation Voltage: 0.3V (max) @ IC = 10mA, IB = 1mA

Package Information

TO-50 Metal Can Package

• Package Type: Hermetically sealed metal can
• Terminal Configuration:
  • Pin 1: Collector
  • Pin 2: Base
  • Pin 3: Emitter
• Dimensions:
  • Body Diameter: 5.2mm (nominal)
  • Height: 4.7mm (nominal)
  • Lead Length: 12.7mm (nominal)
• Weight: Approximately 0.5 grams
• Mounting: Through-hole with recommended hole diameter of 1.0mm
• Marking: Device identification code laser-marked on top surface

Thermal Characteristics

• Thermal Resistance, Junction-to-Ambient (RθJA): 200°C/W
• Thermal Resistance, Junction-to-Case (RθJC): 83°C/W
• Maximum Power Derating: 2.0mW/°C above 25°C

Handling and Storage

To maintain optimal performance and reliability:

• Store in anti-static packaging when not in use
• Maintain storage temperature between -65°C and +150°C
• Use proper ESD precautions during handling and installation
• Avoid mechanical stress on leads during assembly
• Clean with isopropyl alcohol if contamination occurs

Reliability Data

• MTBF: >1,000,000 hours at 25°C
• ESD Rating: Class 1B (Human Body Model)
• Moisture Sensitivity Level (MSL): Level 1 (unlimited floor life)

Ordering Information

• Standard Package: Bulk packaging, 50 pieces per tube
• Alternative Packaging: Tape and reel available upon request
• Custom Marking: Available for large quantity orders

Revision History

• Version 1.0: Initial release with complete specifications
• Version 1.1: Added thermal characteristics and reliability data