Technical Summary: 66 200 N-Channel Enhancement Mode MOSFET

Overview

The 66 200 is an N-channel enhancement mode MOSFET designed for high-efficiency switching applications. This component is optimized for low on-state resistance (R_DS(on)) and fast switching speeds, making it ideal for power management, DC-DC converters, and motor control applications. The device is built using advanced silicon technology to ensure reliability and performance under demanding conditions.

With its robust design, the 66 200 offers excellent thermal stability and high current-handling capabilities. It is suitable for both industrial and consumer electronics, providing a balance between cost and performance.

Features

• N-Channel Enhancement Mode: Ensures low gate drive power and high input impedance.
• Low On-State Resistance (R_DS(on)): Minimizes conduction losses for improved efficiency.
• Fast Switching Speed: Reduces switching losses in high-frequency applications.
• High Current Handling: Capable of handling significant drain currents, making it suitable for power applications.
• Thermal Stability: Designed to operate reliably under high-temperature conditions.
• Low Gate Charge: Enhances switching performance and reduces drive requirements.
• Avalanche Energy Rated: Provides robustness in inductive load applications.

Applications

The 66 200 MOSFET is versatile and can be used in a wide range of applications, including but not limited to:

• Power Supplies: DC-DC converters, switch-mode power supplies (SMPS), and voltage regulators.
• Motor Control: H-bridge circuits, brushed and brushless motor drivers.
• Automotive Systems: Electronic control units (ECUs), LED lighting drivers, and battery management systems.
• Industrial Equipment: Relays, solenoids, and high-power switching circuits.
• Consumer Electronics: Power management in laptops, smartphones, and other portable devices.

Electrical Characteristics

The following table summarizes the key electrical characteristics of the 66 200 MOSFET under standard test conditions (unless otherwise specified):

Absolute Maximum Ratings

• Drain-Source Voltage (V_DSS): 200V
• Gate-Source Voltage (V_GS): ±20V
• Drain Current (I_D): 66A (continuous), 198A (pulsed)
• Power Dissipation (P_D): 300W (at 25°C)
• Operating Junction Temperature (T_J): -55°C to +175°C
• Storage Temperature (T_stg): -55°C to +175°C

Static Electrical Characteristics

• Threshold Voltage (V_GS(th)): 2V to 4V (at I_D = 250µA)
• On-State Resistance (R_DS(on)): 0.025Ω (max) at V_GS = 10V, I_D = 33A
• Gate-Source Leakage Current (I_GSS): ±100nA (max) at V_GS = ±20V
• Drain-Source Leakage Current (I_DSS): 1µA (max) at V_DS = 200V, V_GS = 0V

Dynamic Electrical Characteristics

• Input Capacitance (C_iss): 3000pF (typ) at V_DS = 25V, V_GS = 0V
• Output Capacitance (C_oss): 1000pF (typ) at V_DS = 25V, V_GS = 0V
• Reverse Transfer Capacitance (C_rss): 200pF (typ) at V_DS = 25V, V_GS = 0V
• Turn-On Delay Time (t_d(on)): 10ns (typ) at V_DD = 100V, I_D = 33A, R_G = 10Ω
• Turn-Off Delay Time (t_d(off)): 30ns (typ) at V_DD = 100V, I_D = 33A, R_G = 10Ω

Package Information

The 66 200 MOSFET is available in a TO-247 package, which provides excellent thermal performance and mechanical robustness. The package is designed for easy mounting on heat sinks to dissipate heat effectively in high-power applications.

Package Dimensions

• Package Type: TO-247
• Length: 20.6mm (max)
• Width: 15.6mm (max)
• Height: 5.1mm (max)
• Lead Pitch: 5.45mm (typ)
• Mounting Hole Diameter: 3.5mm (recommended)

Thermal Characteristics

• Thermal Resistance, Junction-to-Case (R_θJC): 0.5°C/W (max)
• Thermal Resistance, Junction-to-Ambient (R_θJA): 40°C/W (max) without heat sink

Conclusion

The 66 200 N-channel enhancement mode MOSFET is a high-performance component designed for demanding power switching applications. Its combination of low R_DS(on), fast switching speeds, and robust thermal characteristics makes it an excellent choice for engineers designing efficient and reliable power systems. Whether used in industrial, automotive, or consumer electronics, the 66 200 delivers consistent performance under a wide range of operating conditions.