2N5415 High Voltage Silicon Transistor

Overview

The 2N5415 is a high-voltage silicon PNP transistor designed for general-purpose amplifier and switching applications. Part of the 2N541x series (including the 2N5416 variant), this component offers robust performance in circuits requiring high voltage handling capabilities. With its reliable construction and electrical characteristics, the 2N5415 is suitable for industrial, commercial, and hobbyist applications where medium power and high voltage tolerance are required.

This transistor is manufactured using silicon epitaxial planar technology, ensuring stable operation across a wide temperature range. Its high breakdown voltage and low leakage current make it particularly useful in circuits where voltage spikes or transients may occur.

Features

• High collector-emitter voltage rating (V_CEO = -80V)
• Medium power dissipation capability (625mW)
• Low collector cutoff current (I_CEO = -1.0µA max)
• Good current gain characteristics (h_FE = 20-120)
• Complementary NPN type available (2N3440 series)
• Epitaxial planar construction for improved reliability
• Available in TO-39 metal can package for good thermal performance
• Operating temperature range: -65°C to +200°C

Applications

The 2N5415 finds use in a variety of electronic circuits requiring high voltage handling capability:

• High voltage switching circuits
• Power supply regulation
• Audio amplifier output stages
• Industrial control systems
• Voltage regulators
• Signal amplification in high impedance circuits
• Driver stages for higher power transistors
• Telecommunication equipment
• Test and measurement instrumentation

Electrical Characteristics

(All values at T_A = 25°C unless otherwise specified)

Absolute Maximum Ratings

• Collector-Emitter Voltage (V_CEO): -80V
• Collector-Base Voltage (V_CBO): -100V
• Emitter-Base Voltage (V_EBO): -5.0V
• Collector Current (I_C): -600mA
• Total Power Dissipation (P_D): 625mW @ 25°C (derate 5mW/°C above 25°C)
• Operating and Storage Temperature Range: -65°C to +200°C

DC Characteristics

• Collector-Emitter Breakdown Voltage (BV_CEO): -80V (I_C = -1.0mA, I_B = 0)
• Collector-Base Breakdown Voltage (BV_CBO): -100V (I_C = -10µA, I_E = 0)
• Emitter-Base Breakdown Voltage (BV_EBO): -5.0V (I_E = -10µA, I_C = 0)
• Collector Cutoff Current (I_CEO): -1.0µA max (V_CE = -60V, I_E = 0)
• DC Current Gain (h_FE):
  • 2N5415: 20-120 @ I_C = -50mA, V_CE = -5.0V
  • 2N5416: 40-120 @ same conditions
• Collector-Emitter Saturation Voltage (V_CE(sat)): -0.5V max (I_C = -50mA, I_B = -5.0mA)
• Base-Emitter Saturation Voltage (V_BE(sat)): -1.0V max (I_C = -50mA, I_B = -5.0mA)

AC Characteristics

• Current Gain-Bandwidth Product (f_T): 50MHz min (V_CE = -10V, I_C = -10mA, f = 100MHz)
• Output Capacitance (C_ob): 6.0pF max (V_CB = -10V, I_E = 0, f = 1.0MHz)
• Input Capacitance (C_ib): 15pF max (V_EB = -0.5V, I_C = 0, f = 1.0MHz)

Package Information

The 2N5415 is available in a TO-39 metal can package, which provides excellent thermal performance and mechanical durability. The package dimensions and pin configuration are as follows:

TO-39 Package Dimensions

• Package Type: TO-39 (JEDEC)
• Body Diameter: 8.13mm (0.320 in) max
• Body Height: 5.59mm (0.220 in) max
• Lead Diameter: 0.51mm (0.020 in) nominal
• Lead Length: 12.7mm (0.500 in) min
• Lead Spacing: 5.08mm (0.200 in) between centers
• Weight: Approximately 0.8 grams

Pin Configuration

• Pin 1: Emitter
• Pin 2: Base
• Pin 3: Collector (case)

Thermal Characteristics

• Thermal Resistance, Junction to Case (R_θJC): 83.3°C/W
• Thermal Resistance, Junction to Ambient (R_θJA): 200°C/W
• Maximum Junction Temperature (T_J): 200°C

Reliability and Qualification

The 2N5415 meets or exceeds the following reliability standards:

• MIL-STD-750 test methods
• JEDEC JESD22 series qualification requirements
• ESD sensitivity: Class 1 (Human Body Model)

Handling and Mounting Considerations

When working with the 2N5415, observe the following precautions:

• Use proper ESD protection when handling
• Do not exceed maximum ratings
• Ensure proper heat sinking if operating near maximum power dissipation
• When soldering, limit temperature to 300°C for 10 seconds maximum
• Maintain proper lead spacing during PCB layout to prevent arcing in high voltage applications
• Consider using insulating bushings when mounting to heatsinks