2N5226 - NPN General Purpose Transistor

Overview

The 2N5226 is a general-purpose NPN bipolar junction transistor (BJT) designed for low-power amplification and switching applications. This component is characterized by its moderate current and voltage ratings, making it suitable for a variety of electronic circuits. The transistor is housed in a TO-92 package, which is widely used for through-hole PCB mounting. The 2N5226 is commonly employed in signal amplification, driver stages, and switching circuits due to its reliable performance and ease of use.

Features

• Low Power Dissipation: Optimized for low-power applications with a maximum power dissipation of 625 mW.
• Moderate Current Handling: Collector current (I_C) rating of 100 mA, suitable for small-signal amplification.
• High Voltage Tolerance: Collector-Emitter voltage (V_CEO) of 30 V and Collector-Base voltage (V_CBO) of 60 V.
• Good DC Current Gain (h_FE): Typical h_FE ranges from 40 to 250, ensuring reliable amplification.
• TO-92 Package: Compact and easy to mount on PCBs or breadboards.
• Wide Operating Temperature Range: Functional from -55°C to +150°C, making it suitable for various environments.

Applications

The 2N5226 is versatile and finds use in multiple electronic applications, including:

• Signal Amplification: Used in audio preamplifiers, RF stages, and other small-signal amplification circuits.
• Switching Circuits: Suitable for driving relays, LEDs, and other low-power loads.
• Oscillators and Waveform Generators: Employed in LC and RC oscillator designs.
• Voltage Regulation: Can be used in linear regulator circuits as a pass element.
• Educational Projects: Ideal for prototyping and learning transistor fundamentals due to its straightforward characteristics.

Electrical Characteristics

The following tables outline the key electrical parameters of the 2N5226 transistor under typical operating conditions (unless otherwise specified).

Absolute Maximum Ratings

• Collector-Base Voltage (V_CBO): 60 V
• Collector-Emitter Voltage (V_CEO): 30 V
• Emitter-Base Voltage (V_EBO): 5 V
• Collector Current (I_C): 100 mA
• Total Power Dissipation (P_tot): 625 mW (at 25°C ambient temperature)
• Operating and Storage Temperature Range: -55°C to +150°C

DC Current Gain (h_FE)

• Test Condition: I_C = 1 mA, V_CE = 10 V
• Minimum h_FE: 40
• Typical h_FE: 100
• Maximum h_FE: 250

Leakage Currents

• Collector Cut-off Current (I_CBO): ≤ 50 nA (V_CB = 60 V, I_E = 0)
• Emitter Cut-off Current (I_EBO): ≤ 50 nA (V_EB = 5 V, I_C = 0)

Frequency Characteristics

• Transition Frequency (f_T): 250 MHz (Typical, I_C = 10 mA, V_CE = 20 V)
• Capacitance (C_ob): 3 pF (Typical, V_CB = 10 V, f = 1 MHz)

Package Information

The 2N5226 is available in a TO-92 package, which is a widely used through-hole transistor package. Below are the key mechanical specifications:

TO-92 Package Dimensions

• Package Type: TO-92 (Plastic Encapsulated)
• Lead Material: Tin-plated copper
• Weight: Approximately 0.13 grams
• Mounting Style: Through-hole
• Pin Configuration:
  • Pin 1: Emitter (E)
  • Pin 2: Base (B)
  • Pin 3: Collector (C)

Thermal Characteristics

• Thermal Resistance, Junction-to-Ambient (R_θJA): 200°C/W
• Thermal Resistance, Junction-to-Case (R_θJC): 83.3°C/W

Conclusion

The 2N5226 is a reliable and versatile NPN transistor suitable for a wide range of low-power amplification and switching applications. Its moderate voltage and current ratings, combined with a robust TO-92 package, make it an excellent choice for hobbyists, educators, and professional engineers alike. Whether used in audio circuits, signal processing, or as a switch, the 2N5226 delivers consistent performance across its operating range.