54 80
54 80 - N-Channel Enhancement Mode MOSFET
Overview
The 54 80 is a high-performance N-channel enhancement mode MOSFET designed for a wide range of switching applications. This component offers excellent electrical characteristics, including low on-state resistance and fast switching speeds, making it ideal for power management applications. The device is constructed using advanced silicon technology to ensure reliability and efficiency in various operating conditions.
With its robust design and superior performance parameters, the 54 80 MOSFET is suitable for both industrial and consumer electronics applications where efficient power handling and compact form factors are required.
Features
- N-channel enhancement mode design
- Low on-state resistance (RDS(on)) for reduced power dissipation
- Fast switching characteristics
- High current handling capability
- Excellent thermal performance
- Low gate drive requirements
- Enhanced dv/dt capability
- RoHS compliant
- Designed for high reliability applications
Applications
The 54 80 MOSFET is versatile and finds use in numerous electronic applications, including:
- Power supply switching circuits
- DC-DC converters
- Motor control systems
- Load switching applications
- Battery management systems
- Automotive electronics
- Industrial automation systems
- Consumer electronics power management
- LED lighting drivers
- Portable electronic devices
Electrical Characteristics
The following tables detail the key electrical specifications of the 54 80 MOSFET:
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | 80 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Drain Current - Continuous | ID | 54 | A |
| Drain Current - Pulsed | IDM | 216 | A |
| Power Dissipation | PD | 150 | W |
| Operating Junction Temperature | TJ | -55 to +175 | °C |
| Storage Temperature Range | Tstg | -55 to +175 | °C |
Static Electrical Characteristics
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | ID = 250µA, VGS = 0V | 80 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 1.0 | 2.0 | 3.0 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS = 10V, ID = 27A | - | 0.008 | 0.010 | Ω |
| Forward Transconductance | gfs | VDS = 50V, ID = 27A | 30 | 50 | - | S |
Dynamic Electrical Characteristics
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Input Capacitance | Ciss | VDS = 25V, VGS = 0V, f = 1MHz | - | 3000 | 4000 | pF |
| Output Capacitance | Coss | VDS = 25V, VGS = 0V, f = 1MHz | - | 800 | 1000 | pF |
| Reverse Transfer Capacitance | Crss | VDS = 25V, VGS = 0V, f = 1MHz | - | 100 | 150 | pF |
| Turn-On Delay Time | td(on) |
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