K4F660412C - 16Mx4 Fast Page Mode DRAM

Overview

The K4F660412C is a 16Mx4 Fast Page Mode DRAM (Dynamic Random Access Memory) component manufactured by Samsung Electronics Co., Ltd. This high-performance memory device is designed to provide high bandwidth, low power consumption, and high reliability, making it suitable for a variety of computing and embedded applications. The device is fabricated using Samsung's advanced CMOS process, ensuring efficient operation and durability.

The K4F660412C supports multiple refresh modes, including CAS-before-RAS refresh, RAS-only refresh, Hidden refresh, and Self-refresh (available in L-version only). These features enhance its versatility and performance in different operational scenarios. The device is compatible with LVTTL (3.3V) inputs and outputs, ensuring seamless integration with modern low-voltage systems.

Features

• Fast Page Mode Operation: Enables high-speed access to memory locations within the same row, improving overall system performance.
• Multiple Refresh Capabilities: Includes CAS-before-RAS refresh, RAS-only refresh, Hidden refresh, and Self-refresh (L-version only) for flexible memory management.
• Fast Parallel Test Mode: Facilitates efficient testing during manufacturing and quality assurance processes.
• LVTTL (3.3V) Compatibility: Ensures compatibility with low-voltage systems and reduces power consumption.
• Early Write or Output Enable Controlled Write: Provides flexibility in write operations, allowing for either early write or output enable controlled write modes.
• JEDEC Standard Pinout: Ensures compatibility with industry-standard designs and simplifies integration.
• Package Options: Available in Plastic SOJ and TSOP(II) packages, offering flexibility in board design and space utilization.
• Power Supply: Operates at +3.3V ±0.3V, making it suitable for low-power applications.

Applications

The K4F660412C is designed for use in a wide range of applications, including but not limited to:

• Computing Systems: Suitable for use in desktops, laptops, and servers where high-speed memory access is critical.
• Embedded Systems: Ideal for embedded applications requiring reliable and low-power memory solutions.
• Networking Equipment: Used in routers, switches, and other networking devices that demand high bandwidth and low latency.
• Consumer Electronics: Applicable in smart TVs, gaming consoles, and other multimedia devices.
• Industrial Control Systems: Provides reliable memory for automation and control systems in industrial environments.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (Vcc): -0.5V to +4.6V
• Input Voltage (Vin): -0.5V to Vcc + 0.5V
• Output Voltage (Vout): -0.5V to Vcc + 0.5V
• Operating Temperature Range: 0°C to +70°C (Commercial), -40°C to +85°C (Industrial)
• Storage Temperature Range: -55°C to +150°C

Recommended Operating Conditions

• Supply Voltage (Vcc): +3.3V ±0.3V
• Input High Voltage (Vih): 2.0V to Vcc + 0.3V
• Input Low Voltage (Vil): -0.3V to 0.8V
• Output High Voltage (Voh): 2.4V (min) at Ioh = -4.0mA
• Output Low Voltage (Vol): 0.4V (max) at Iol = 8.0mA

Timing Characteristics

• RAS Precharge Time (tRP): 20ns (min)
• CAS Precharge Time (tCP): 20ns (min)
• RAS to CAS Delay Time (tRCD): 20ns (min)
• CAS Pulse Width (tCAS): 20ns (min)
• Write Pulse Width (tWP): 20ns (min)
• Access Time from CAS (tCAC): 15ns (max)
• Access Time from RAS (tRAC): 60ns (max)

Package Information

Plastic SOJ Package

• Package Dimensions: 400mil width, 20-pin configuration
• Pin Pitch: 1.27mm
• Lead Material: Copper alloy
• Lead Finish: Matte tin

TSOP(II) Package

• Package Dimensions: 400mil width, 20-pin configuration
• Pin Pitch: 0.8mm
• Lead Material: Copper alloy
• Lead Finish: Matte tin

Functional Block Diagram

The functional block diagram of the K4F660412C includes the following key components:

• Control Clocks: RAS, CAS, W
• Power Supply: Vcc, Vss
• Address Inputs: A0~A12 (A0~A11 for 4K refresh)
• Memory Array: 16,777,216 x 4 cells

Conclusion

The K4F660412C is a versatile and high-performance Fast Page Mode DRAM designed for a wide range of applications. Its advanced features, including multiple refresh modes, LVTTL compatibility, and flexible write operations, make it a reliable choice for modern computing and embedded systems. With its robust electrical characteristics and industry-standard packaging options, the K4F660412C offers a compelling solution for designers seeking high-speed, low-power memory solutions.