K4E660812D - 8Mx8 EDO Mode DRAM

Overview

The K4E660812D is an 8Mx8 Extended Data Out (EDO) Mode DRAM component manufactured by Samsung Electronics Co., Ltd. This high-performance memory device is designed for applications requiring high bandwidth, low power consumption, and reliable operation. Fabricated using Samsung's advanced CMOS process, the K4E660812D offers enhanced data transfer capabilities and supports multiple refresh modes, including self-refresh in the L-version variant.

The device is compatible with LVTTL (3.3V) logic levels and is available in industry-standard plastic SOJ and TSOP(II) packages. Its JEDEC-standard pinout ensures easy integration into existing designs, while features like early write and output enable controlled write provide flexibility in system implementation.

Features

• Extended Data Out (EDO) Mode Operation: Enables faster data access by maintaining output data valid until the next CAS cycle begins.
• Multiple Refresh Capabilities:
  • CAS-before-RAS refresh
  • RAS-only refresh
  • Hidden refresh
  • Self-refresh capability (L-version only)
• Fast Parallel Test Mode: Facilitates efficient production testing.
• LVTTL (3.3V) Compatibility: Inputs and outputs are compatible with 3.3V logic levels.
• Flexible Write Options: Supports both early write and output enable controlled write operations.
• Standard Compliance: JEDEC standard pinout for easy system integration.
• Package Options: Available in Plastic SOJ and TSOP(II) packages.
• Power Supply: Operates from a single +3.3V ±0.3V power source.

Applications

The K4E660812D is suitable for a wide range of applications requiring high-performance memory solutions, including:

• Desktop and workstation computers
• Network servers and storage systems
• High-performance graphics cards
• Embedded systems requiring reliable DRAM
• Industrial control systems
• Telecommunications equipment

Its EDO mode operation makes it particularly well-suited for systems where burst mode data transfers can improve overall performance.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (Vcc): -0.5V to +4.6V
• Input Voltage (Vin): -0.5V to Vcc+0.5V
• Output Voltage (Vout): -0.5V to Vcc+0.5V
• Operating Temperature Range: 0°C to +70°C (Commercial)
• Storage Temperature Range: -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (Vcc): 3.3V ±0.3V
• Input High Voltage (VIH): 2.0V min
• Input Low Voltage (VIL): 0.8V max
• Operating Temperature: 0°C to +70°C

DC Characteristics

• Input Leakage Current (Iin): ±1μA max
• Output Leakage Current (Iout): ±1μA max
• Operating Current (Icc): 120mA max (active)
• Standby Current (Isb): 20mA max (CMOS level inputs)
• Refresh Current (Icc2): 30mA max

AC Characteristics

• RAS Access Time (tRAC): 60ns max
• CAS Access Time (tCAC): 15ns max
• CAS Precharge Time (tCP): 15ns min
• RAS Precharge Time (tRP): 30ns min
• Write Pulse Width (tWP): 30ns min
• Refresh Period (tREF): 64ms max (4K refresh cycles)

Package Information

Available Packages

• Plastic SOJ (Small Outline J-lead):
  • Package dimensions: 400mil width
  • Pin count: 28
  • Lead pitch: 1.27mm
• TSOP(II) (Thin Small Outline Package Type II):
  • Package dimensions: 400mil width
  • Pin count: 28
  • Lead pitch: 0.8mm
  • Package thickness: 1.2mm max

Package Marking

The device is marked with the following information on the package:

• Samsung logo
• Part number (K4E660812D)
• Speed grade
• Package type
• Date code
• Country of manufacture

Functional Description

The K4E660812D organizes 8,388,608 memory cells in an 8Mx8 configuration. The device features address multiplexing to reduce pin count, with row addresses (A0-A12) and column addresses (A0-A11) sharing the same physical pins. The memory array is divided into four 2Mx8 banks, allowing for efficient refresh operations.

The EDO mode operation extends the data output valid period beyond the conventional DRAM access cycle, enabling faster system throughput. The device supports three refresh methods:

1. CAS-before-RAS Refresh: The standard refresh method where CAS is asserted before RAS.
2. RAS-only Refresh: A single row is refreshed by asserting RAS while holding CAS high.
3. Hidden Refresh: Combines refresh with an active cycle for improved performance.

The L-version of the device adds self-refresh capability, where an on-chip timer automatically generates refresh cycles while the device is in standby mode.

Ordering Information

The complete ordering information for the K4E660812D includes:

• Base part number: K4E660812D
• Speed grade (e.g., -X for 60ns access time)
• Package type (e.g., S for SOJ, T for TSOP)
• Temperature range (C for commercial 0°C to +70°C)
• Special features (e.g., L for self-refresh capability)

Example: K4E660812D-XTC would indicate a 60ns TSOP version for commercial temperature range.