HM5165405F 64M-bit Dynamic RAM Technical Summary

Overview

The Hitachi HM5165405F is a high-performance 64M-bit dynamic RAM organized as 16,777,216 words × 4 bits. Manufactured using advanced CMOS process technology, this component delivers exceptional performance while maintaining low power consumption. The device features Extended Data Out (EDO) Page Mode for high-speed access operations and is available in a standard 32-pin plastic SOJ package. Designed for applications requiring reliable memory solutions, the HM5165405F offers multiple refresh modes and low-power operation variants.

Key Features

• 64M-bit organization (16,777,216 words × 4 bits)
• Single 3.3V power supply (±0.3V tolerance)
• Extended Data Out (EDO) Page Mode capability
• Multiple refresh mode options
• Low-power variants available (L-version)
• Battery backup operation supported (L-version)
• Available in 32-pin plastic SOJ package

Applications

The HM5165405F is suitable for a wide range of applications including:

• Computer systems and workstations
• Networking equipment
• Telecommunications systems
• Embedded systems
• Industrial control systems
• Battery-powered devices (L-version)
• Portable electronics

Electrical Characteristics

Power Requirements

• Supply Voltage: 3.3V ±0.3V

Performance Characteristics

• Maximum access time: 50ns/60ns

Power Consumption

• Active mode (max):
  • HM5164405F Series: 396mW/360mW
  • HM5165405F Series: 468mW/396mW
• Standby mode (max):
  • CMOS interface: 1.8mW
  • L-version: 1.1mW

Refresh Characteristics

• RAS-only refresh:
  • HM5164405F, HM5164405FL: 8192 cycles/64ms
  • HM5165405F, HM5165405FL: 4096 cycles/64ms
• CBR/Hidden refresh:
  • All versions: 4096 cycles/64ms

Refresh Modes

The HM5165405F supports four distinct refresh modes:

• RAS-only refresh
• CAS-before-RAS refresh
• Hidden refresh
• Self refresh (L-version only)

Package Information

32-pin Plastic SOJ Package

• Package type: Small Outline J-lead (SOJ)
• Pin count: 32
• Material: Plastic
• Standard industrial package

Ordering Information

The HM5165405F is available in different variants to suit various application requirements:

• Standard version
• L-version (low power)
• Different speed grades (50ns/60ns)

Detailed Specifications

Memory Organization

The HM5165405F is organized as 4,194,304 addresses × 4 bits × 4 banks, providing flexible memory access. The 4-bit organization makes it particularly suitable for applications requiring moderate data width with high density.

Operating Modes

• Read/Write operations
• Page mode operation
• Extended Data Out (EDO) mode
• Standby mode
• Battery backup mode (L-version)

Timing Characteristics

The device offers fast access times with maximum ratings of 50ns or 60ns depending on the specific variant. The EDO page mode capability significantly improves performance in sequential access applications.

Reliability Features

• Multiple refresh options ensure data integrity
• CMOS technology provides low power consumption
• Robust package design for industrial applications
• Extended temperature range options available

Design Considerations

Power Management

The HM5165405F offers excellent power management capabilities, particularly in the L-version which features reduced standby current and self-refresh capability. This makes it ideal for battery-powered applications where power conservation is critical.

System Integration

When designing with the HM5165405F, consider the following:

• Proper power supply decoupling
• Refresh timing requirements
• Signal integrity for high-speed operation
• Thermal considerations in high-density designs

Environmental Specifications

• Operating temperature range: Commercial and industrial grades available
• Storage temperature range: -55°C to +125°C
• Moisture sensitivity: MSL rating per JEDEC standards

Conclusion

The Hitachi HM5165405F 64M-bit DRAM provides an excellent balance of performance, power efficiency, and density for a wide range of applications. With its multiple refresh modes, low-power options, and reliable SOJ packaging, this memory solution is well-suited for both commercial and industrial applications requiring robust memory performance.