Advertisement

93C46

#93C46 #EEPROM #non-volatile memory #serial interface #Microwire #1K-bit #data storage #low power
Here is a detailed HTML-formatted technical summary for the 93C46 EEPROM: ```html

93C46 1K-Bit Serial EEPROM Technical Summary

Overview

The 93C46 is a 1K-bit (128 x 8 or 64 x 16) serial Electrically Erasable Programmable Read-Only Memory (EEPROM) featuring a Microwire-compatible serial interface. This non-volatile memory device is designed for applications requiring reliable data storage with low power consumption. The 93C46 offers enhanced ESD protection and built-in security features, making it suitable for harsh electrical environments.

Key advantages of the 93C46 include its small footprint, simple 3-wire interface, and low power operation. The device supports both 8-bit and 16-bit organization modes, providing flexibility for different system architectures.

Features

Applications

The 93C46 is widely used in various electronic systems requiring compact, non-volatile memory storage:

Electrical Characteristics

Absolute Maximum Ratings

DC Characteristics (VCC = 5V ±10%, TA = 25°C)

AC Characteristics

Package Information

The 93C46 is available in multiple package options to suit different application requirements:

8-Pin Packages

Pin Configuration

The 8-pin configuration is as follows:

Functional Description

The 93C46 operates through a simple 3-wire serial interface consisting of Chip Select (CS), Serial Clock (SK), and bidirectional Data (DI/DO) lines. The device supports both 8-bit and 16-bit data organization, selected via the ORG pin (tied to VCC for 16-bit mode or GND for 8-bit mode).

Instruction Set

The 93C46 recognizes the following commands:

Reliability Characteristics

Ordering Information

The 93C46 is available in different variants based on temperature range and package type:

Package options are specified by suffix (P for PDIP, S for SOIC, T for TSSOP

Similar Components
24256 A – Datasheet Preview
24256 A
These I2C-compatible electrically erasable pro-…
29W800 – Datasheet Preview
29W800
The M29W800A isa non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC su…
29W400 – Datasheet Preview
29W400
The M29W400B is a 4 Mbit (512Kb x8 or 256Kb…
K4E641612D – Datasheet Preview
K4E641612D
FUNCTIONAL BLOCK DIAGRAM Note) *1 : 4K Refresh Sense Amps & I/O Upper Data in Buffer Upper Data out Buffer Lower Data in Buffer DQ8 to DQ15 OE Row Decoder Column Decoder VBB Generator Refresh Timer Re…
29F200 – Datasheet Preview
29F200
The M29F200B is a 2 Mbit (256Kb x8 or 128Kb…
HM5425801B – Datasheet Preview
HM5425801B
The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data…