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67S36130

#67S36130 #memory IC #storage #data retention #integrated circuit #non-volatile #EEPROM #flash memory
Here is a professional, thorough, and detailed HTML-formatted technical summary for the **67S36130** component: ```html 67S36130 Technical Summary

67S36130 Technical Summary

Overview

The 67S36130 is a high-performance synchronous memory component designed for applications requiring fast data access and reliable operation. It operates at 3.3V ± 5% and features LVCMOS-compatible inputs and outputs, making it suitable for integration into modern digital systems. The device supports synchronous operation with differential PECL clock inputs, ensuring precise timing and high-speed data transfer.

Key functionalities include internal self-timed late write, asynchronous G output control, and byte write control (with four byte write selects, one for each 9-bit segment). The component also features a power-down mode for energy efficiency and boundary scan capabilities for testing and debugging.

Features

Applications

The 67S36130 is ideal for a wide range of applications, including:

Electrical Characteristics

Parameter Value Unit
Operating Voltage 3.3V ± 5% V
Cycle Time (HM67S36130BP-7) 7.0 ns
Input High Voltage (VIH) 2.0 V
Input Low Voltage (VIL) 0.8 V
Output High Voltage (VOH) 2.4 V
Output Low Voltage (VOL) 0.4 V
Power-Down Current Specified in datasheet µA

Package Information

The 67S36130 is available in a 119-bump BGA (Ball Grid Array) package with dimensions of 14 mm × 22 mm. The package is designated as BP-119A and is designed for high-density PCB layouts.

Pin Arrangement (Top View)

The pin arrangement is organized to optimize signal integrity and ease of routing. Key pins include:

Block Diagram

The internal architecture of the 67S36130 includes:

Ordering Information

Type Number Cycle Time Package
HM67S36130BP-7 7.0 ns 119 Bump BGA (BP-119A)

For further details, refer to the datasheet for timing diagrams, absolute maximum ratings, and additional specifications.

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