HM624100H 4-Mbit High-Speed Static RAM

Overview

The HM624100H is a high-performance 4-Mbit static RAM organized as 1-Mword × 4-bit. Designed using advanced CMOS process technology (4-transistor + 2-poly resistor memory cell) and high-speed circuit design techniques, this SRAM delivers exceptional access times, making it ideal for applications requiring both high speed and high-density memory. The device operates on a single 5V power supply and is packaged in a 400-mil 32-pin SOJ (Small Outline J-lead) package, optimized for high-density surface mounting applications.

Features

• Single 5.0V Power Supply: Operates at 5.0V ± 10%.
• High-Speed Access Time: Available in 10 ns, 12 ns, and 15 ns maximum access time variants.
• Completely Static Memory: No clock or timing strobe required for operation.
• Equal Access and Cycle Times: Ensures consistent performance for read and write operations.
• TTL Compatibility: All inputs and outputs are directly TTL compatible.
• Low Power Consumption:
  • Operating current: 200 mA (max) for 10 ns, 180 mA (max) for 12 ns, 160 mA (max) for 15 ns.
  • TTL standby current: 70 mA (max) for 10 ns, 60 mA (max) for 12 ns, 50 mA (max) for 15 ns.
  • CMOS standby current: 5 mA (max) (standard version), 1.2 mA (max) (L-version).
  • Data retention current: 0.8 mA (max) (L-version) at 2.0V (min) data retention voltage.
• Center VCC and VSS Pinout: Optimized for efficient power distribution.

Applications

The HM624100H is designed for high-performance applications where fast access times and high-density memory are critical. Typical applications include:

• Cache memory in computing systems.
• Buffer memory in networking and telecommunications equipment.
• High-speed data logging and acquisition systems.
• Embedded systems requiring fast, reliable SRAM.
• Industrial control systems with stringent timing requirements.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (VCC): -0.5V to +7.0V
• Input Voltage (VIN): -0.5V to VCC + 0.5V
• Output Voltage (VOUT): -0.5V to VCC + 0.5V
• Operating Temperature Range: 0°C to +70°C
• Storage Temperature Range: -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (VCC): 4.5V to 5.5V
• Input High Voltage (VIH): 2.2V to VCC
• Input Low Voltage (VIL): -0.5V to 0.8V
• Operating Temperature: 0°C to +70°C

DC Characteristics

• Input Leakage Current (II): ±1.0 µA (max)
• Output Leakage Current (IOZ): ±1.0 µA (max)
• Output High Voltage (VOH): 2.4V (min) at IOH = -2.0 mA
• Output Low Voltage (VOL): 0.4V (max) at IOL = 2.0 mA

AC Characteristics

• Read Cycle Time (tRC): Equal to access time (10/12/15 ns).
• Write Cycle Time (tWC): Equal to access time (10/12/15 ns).
• Chip Select to Output Valid (tCO): 10/12/15 ns (max).
• Output Enable to Output Valid (tOE): 5 ns (max).
• Write Pulse Width (tWP): 8/10/12 ns (min).

Package Information

Ordering Information

• HM624100HJP-10: 10 ns access time, 400-mil 32-pin plastic SOJ (CP-32DB).
• HM624100HJP-12: 12 ns access time, 400-mil 32-pin plastic SOJ (CP-32DB).
• HM624100HJP-15: 15 ns access time, 400-mil 32-pin plastic SOJ (CP-32DB).
• HM624100HLJP-10: 10 ns access time, L-version, 400-mil 32-pin plastic SOJ (CP-32DB).
• HM624100HLJP-12: 12 ns access time, L-version, 400-mil 32-pin plastic SOJ (CP-32DB).
• HM624100HLJP-15: 15 ns access time, L-version, 400-mil 32-pin plastic SOJ (CP-32DB).

Pin Configuration (Top View)

The HM624100H features a 32-pin SOJ package with the following pin arrangement:

• Pins 1-16: A0, A1, A2, A3, A4, CS, I/O1, VCC, VSS, I/O2, WE, A5, A6, A7, A8, A9
• Pins 17-32: A19, A18, A17, A16, A15, OE, I/O4, VSS, VCC, I/O3, A14, A13, A12, A11, A10, NC

Pin Descriptions

• A0-A19: Address inputs for memory access.
• I/O1-I/O4: Data input/output lines.
• CS: Chip select input (active low).
• OE: Output enable input (active low).
• WE: Write enable input (active low).
• VCC: Power supply (5V).
• VSS: Ground.
• NC: No connection (reserved for future use).

Block Diagram

The HM624100H features a standard SRAM block diagram with address decoding logic, memory cell array, and input/output control circuitry. The memory array is organized as 1M words × 4 bits, with the address lines (A0-A19) selecting the desired memory location. The data lines (I/O1-I/O4) are bidirectional and controlled by the OE and WE signals.

Conclusion

The HM624100H is a high-performance 4-Mbit static RAM offering fast access times,