BAT85 Schottky Barrier Diode

Overview

The BAT85 is a planar Schottky barrier diode designed for high-efficiency rectification and switching applications. It features an integrated protection ring that safeguards against static discharges, making it highly reliable in sensitive circuits. Encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package, the BAT85 is optimized for mounting on a 2 E (5.08 mm) pitch. Its robust construction and low forward voltage characteristics make it a preferred choice for designers seeking performance and durability.

Features

• Low Forward Voltage: Ensures minimal power loss and high efficiency in rectification and switching applications.
• Guard Ring Protection: Integrated guard ring provides enhanced protection against electrostatic discharges (ESD), improving reliability.
• Hermetically-Sealed Package: The leaded glass SOD68 (DO-34) package offers excellent environmental protection, ensuring long-term stability.
• Subminiature Design: Compact form factor suitable for space-constrained applications.
• High Switching Speed: Ideal for high-frequency applications due to fast switching characteristics.

Applications

The BAT85 is versatile and finds use in a wide range of electronic circuits, including:

• Signal Demodulation: Used in RF and communication circuits for demodulating signals.
• Power Rectification: Efficiently converts AC to DC in low-power applications.
• Switching Circuits: Fast switching speed makes it suitable for digital and analog switching applications.
• Voltage Clamping: Protects sensitive components from voltage spikes.
• Reverse Polarity Protection: Safeguards circuits from damage due to incorrect power supply connections.

Electrical Characteristics

The following table summarizes the key electrical characteristics of the BAT85 Schottky barrier diode under typical operating conditions (unless otherwise specified):

Absolute Maximum Ratings

• Peak Repetitive Reverse Voltage (V_RRM): 30 V
• Average Rectified Forward Current (I_F(AV)): 200 mA
• Non-Repetitive Peak Forward Surge Current (I_FSM): 2 A (t_p = 1 s)
• Operating Junction Temperature (T_j): -65°C to +125°C
• Storage Temperature (T_stg): -65°C to +150°C

Forward Characteristics

• Forward Voltage (V_F): 0.32 V (Typical) at I_F = 10 mA
• Forward Voltage (V_F): 0.55 V (Maximum) at I_F = 100 mA

Reverse Characteristics

• Reverse Leakage Current (I_R): 5 µA (Maximum) at V_R = 30 V, T_j = 25°C
• Reverse Leakage Current (I_R): 50 µA (Maximum) at V_R = 30 V, T_j = 125°C

Dynamic Characteristics

• Junction Capacitance (C_j): 2 pF (Typical) at V_R = 0 V, f = 1 MHz
• Reverse Recovery Time (t_rr): 4 ns (Typical) at I_F = 10 mA, I_R = 1 mA

Package Information

The BAT85 is housed in a SOD68 (DO-34) hermetically-sealed leaded glass package, which provides excellent mechanical and environmental protection. Below are the key package details:

Package Dimensions

• Body Length: 3.8 mm (Maximum)
• Body Diameter: 1.8 mm (Maximum)
• Lead Length: 25.4 mm (Minimum)
• Lead Diameter: 0.45 mm (Typical)

Mounting Information

• Recommended PCB Hole Diameter: 0.6 mm
• Mounting Pitch: 5.08 mm (2 E)
• Soldering Temperature: 260°C (Maximum for 10 seconds)

Marking Information

The BAT85 diode is marked with the following identification:

• Part Number: "BAT85" printed on the body.
• Cathode Identification: A color band (typically black) indicates the cathode terminal.

Conclusion

The BAT85 Schottky barrier diode is a high-performance component designed for applications requiring low forward voltage, fast switching, and robust ESD protection. Its hermetically-sealed SOD68 (DO-34) package ensures durability in harsh environments, while its compact size makes it suitable for space-constrained designs. Whether used in signal demodulation, power rectification, or voltage clamping, the BAT85 delivers reliable performance and efficiency.