2N6764 FET Derating Curve
Description: MIL-PRF-19500/543; Semiconductor Device, Transistor, Field Effect, N-Channel, Silicon, Repetitive Avalanche Types 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, and 2N6770T1 [TO-204AE; formerly designated as a TO-3] TO-204 Flange mount. [Diamond Base] A package shape which provides a method of readily attaching one surface of the semiconductor device to a heat dissipater [Heat Sink] to achieve thermal management of the case temperature. This semiconductor package has the Drain electrically connected to the case. Additional design data on the TO-204 Package.
The MIL-PRF-19500/543 specification outlines a series of N-channel field effect transistors (FETs) designed for repetitive avalanche applications. These transistors include part numbers such as 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, and 2N6770T1. The devices are encapsulated in a TO-204AE package, which is also known as a TO-3 package. This specific package type is characterized by its diamond base shape, facilitating efficient mounting and thermal management.
The TO-204 package is designed to allow for the direct attachment of one surface of the semiconductor device to a heat sink, which is critical for maintaining optimal operating temperatures, especially in high-power applications. The thermal management is achieved through the package's construction, which ensures that the drain terminal is electrically connected to the case, thereby allowing for effective heat dissipation.
This configuration supports the reliable performance of the transistor under repetitive avalanche conditions, making it suitable for various applications in power electronics. The additional design data related to the TO-204 package further enhances understanding of its thermal and electrical characteristics, ensuring that engineers can effectively integrate these components into their circuit designs.MIL-PRF-19500/543; Semiconductor Device, Transistor, Field Effect, N-Channel, Silicon, Repetitive Avalanche Types 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, and 2N6770T1 [TO-204AE; formerly designated as a TO-3] TO-204 Flange mount. [Diamond Base] A package shape which provides a method of readily attaching one surface of the semiconductor
device to a heat dissipater [Heat Sink] to achieve thermal management of the case temperature. This semiconductor package has the Drain electrically connected to the case. Additional design data on the TO-204 Package.
The MIL-PRF-19500/543 specification outlines a series of N-channel field effect transistors (FETs) designed for repetitive avalanche applications. These transistors include part numbers such as 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, and 2N6770T1. The devices are encapsulated in a TO-204AE package, which is also known as a TO-3 package. This specific package type is characterized by its diamond base shape, facilitating efficient mounting and thermal management.
The TO-204 package is designed to allow for the direct attachment of one surface of the semiconductor device to a heat sink, which is critical for maintaining optimal operating temperatures, especially in high-power applications. The thermal management is achieved through the package's construction, which ensures that the drain terminal is electrically connected to the case, thereby allowing for effective heat dissipation.
This configuration supports the reliable performance of the transistor under repetitive avalanche conditions, making it suitable for various applications in power electronics. The additional design data related to the TO-204 package further enhances understanding of its thermal and electrical characteristics, ensuring that engineers can effectively integrate these components into their circuit designs.MIL-PRF-19500/543; Semiconductor Device, Transistor, Field Effect, N-Channel, Silicon, Repetitive Avalanche Types 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, and 2N6770T1 [TO-204AE; formerly designated as a TO-3] TO-204 Flange mount. [Diamond Base] A package shape which provides a method of readily attaching one surface of the semiconductor
device to a heat dissipater [Heat Sink] to achieve thermal management of the case temperature. This semiconductor package has the Drain electrically connected to the case. Additional design data on the TO-204 Package.
Tube for a shunt voltage regulator
Use one FET, one Zener diode, and one resistor. The FET and resistor are unnecessary if the current is within the specifications for the Zener diode. Alternatively, a P-channel device may be used.
The described circuit configuration includes a Field Effect...
FET Audio Mixer and Switch
Instructions for building a FET audio mixer and switch circuit. The parts list includes: R1 - 1MΩ, R2 - 47kΩ, R3 - 47kΩ, R4 - 1MΩ, R5 - 47kΩ, R6 - 47kΩ, R7 - 47kΩ, VR1 - 50kΩ, VR2 -...
FET biasing
Unlike BJTs, thermal runaway does not occur with FETs. However, the significant differences in maximum and minimum transfer characteristics make ID levels unpredictable with a simple fixed-gate bias voltage. To achieve reasonable limits on quiescent drain currents (ID) and drain-source...
The basic FET amplifier circuit a
The FET exhibits a high input impedance, a low noise figure, anti-crosstalk capabilities, and good mutual interference performance, making it increasingly utilized in electronic circuits. FET amplifiers can be configured in various ways, including as common source (equivalent to a...
2N2497 Differential FET Voltmeter
Two single-ended circuits are connected back to back to provide a differential input. This circuit not only features a differential input but also exhibits high impedance, significantly higher than that of an analog ammeter without this circuit. A schematic diagram...
FET used as a silencer tube headphone circuit
A field-effect transistor (FET) is utilized in a headphone circuit designed to function as a silencer tube. The circuit integrates L from the digital signal processing unit and R from the audio signal into the headphone jack's mute control circuit....
FET Audio Mixer circuit
The mixer can accommodate any number of channels as needed by duplicating the input sections illustrated in the schematic. One instance of this mixer featured 25 inputs.
The mixer circuit is designed to provide flexibility in channel configuration, allowing for an...
Band 2 Preamplifier
The circuit utilizes two 2N3819 FETs arranged in a cascode configuration. The lower FET functions in common source mode, while the upper FET operates in common gate mode, achieving full high-frequency gain. The lower FET is tunable, enabling peak tuning...
Fet Buffer for amplifiers
The EDFET drives like a FET, but with the bias stability of bipolar. Amps of output current can be controlled by milliamps of input current. The current gain is a design choice dictated by bandwidth. Two of things you have...