Description: In applications where a MOSFET is employed to switch a load, incorporating short-circuit or overload protection is straightforward. This can be achieved by utilizing the internal resistance RDS(ON) of the MOSFET, which generates a voltage drop proportional to the current flowing through it. This voltage across the internal resistance can be monitored using a simple comparator or a transistor that activates at approximately 0.5V. This method eliminates the need for a sense resistor (shunt), which typically introduces an undesirable additional voltage drop. The comparator can be interfaced with a microcontroller, allowing for software-based responses to overload conditions, such as PWM regulation, alarms, or emergency stops. Additionally, the comparator output can be connected directly to the gate of the MOSFET to immediately disable the transistor in the event of a short circuit.
In the described circuit, the MOSFET operates as a switch for the load, with its internal resistance RDS(ON) serving as a means to detect current levels. The voltage drop across RDS(ON) is directly proportional to the current flowing through the MOSFET, allowing for effective monitoring of the load conditions. The comparator is set to trigger at a threshold voltage of around 0.5V, which corresponds to a specific current limit that indicates an overload condition.
When the voltage across RDS(ON) exceeds this threshold, the comparator activates, signaling the microcontroller to implement protective measures. These measures can include adjusting the PWM signal driving the MOSFET to reduce the load current, activating an alarm to alert users, or initiating an emergency stop to disconnect the load entirely. This layered approach to overload protection enhances system reliability and safety.
Furthermore, connecting the comparator output directly to the MOSFET gate allows for immediate response to short-circuit events. When a short circuit occurs, the rapid increase in current causes the voltage across RDS(ON) to rise quickly, triggering the comparator. This action results in the MOSFET being turned off almost instantaneously, thereby protecting the circuit from potential damage.
Overall, this design leverages the inherent properties of the MOSFET and simple components to create an efficient and effective overload and short-circuit protection mechanism, enhancing the robustness of electronic applications that rely on MOSFET switching.If you have an application in which a MOSFET is already used to switch a load, it is relatively easy to add short-circuit or overload protection. Here we make use of the internal resistance RDS(ON), which produces a voltage drop that depends on the amount of current flowing through the MOSFET.
The voltage across the internal resistance can be sensed using simple comparator or even a transistor, which switches on at a voltage of around 0. 5V. You can thus avoid the use of a sense resistor (shunt), which usually produces an undesirable extra voltage drop. The comparator can be monitored by a microcontroller. In case of an overload, the software can initiate suitable countermeasures (PWM regulation, alarm, emergency stop etc.
). It is also conceivable to connect the comparator output directly to the gate of the MOSFET, in order to immediately cut off the transistor in case of a short circuit.
Currently, a basic MOSFET amplifier or power amplifier is designed to deliver an output power of ±100 Watts RMS with an 8 Ohm load, or ±160 Watts RMS with a 4 Ohm load. The simplicity of this circuit results in...
The top channel represents the signal to the gate of a MOSFET, which is controlling a tank circuit consisting of a large coil wrapped around ferrite and a 5µF capacitor. The coil's size results in an operating frequency close to...
This is a variation on the astable multivibrator. Circuit was recently developed to test for N-mosfets (the power kind e.g. irf830). I don't claim circuit can test all bad mosfets or all fault mosfet conditions. If mosfet is working it...
This circuit is similar to the one above, but uses a N channel mosfet such as IRF530, 540, 640, etc. in place of the NPN transistor. Smaller mosfets could be used, but I don't know the part numbers. I tested...
Two working examples have been assembled, one utilizing a PNP and an NPN transistor, and the other employing two MOSFETs. Both circuits function correctly, but as anticipated, the MOSFET circuit draws significantly less current (0.1 mA compared to 4.5 mA)....
The converter depicted in Figure 1 utilizes a component from the PeakSwitch family (U1, a PKS606YN) to operate a 36 W motor, capable of handling startup and load transition peaks of up to 72 W. The motor speed can be...
The LTC1043 can be induced through any of its current shunt supply rails. Many cells and solar system applications have this feature. If the reference point is grounded, the voltage output of an unloaded amplifier is minimal, allowing the rail...
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is analogous to the Junction Field-Effect Transistor (JFET) in several aspects. Both types are voltage-driven unipolar devices that rely on either electron or hole movement, but not both, unlike bipolar transistors. A key structural distinction...
The following segment provides the enhanced Motorola schematic for a typical application of the MRF141G, which includes parasitic stabilization features. The MRF141G is a broadband power RF MOSFET capable of delivering a conservatively rated 300 watts across the FM broadcast...
We use cookies to enhance your experience, analyze traffic, and (if you allow) serve personalized ads.
By clicking Accept All, you agree to our use of cookies.
Learn more